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Topological conditions for impurity effects in carbon nanosystems

Yuriy G. Pogorelov [email protected] IFIMUP-IN, Departamento de Física, Universidade do Porto, Porto, Portugal,    Vadim M. Loktev [email protected] N. N. Bogolyubov Institute of Theoretical Physics, NAS of Ukraine, Kyiv, Ukraine,
&
Igor Sikorsky Kyiv Polytechnic Institute, Kyiv, Ukraine,
Abstract

We consider electronic spectra of carbon nanotubes and their perturbation by impurity atoms absorbed at different positions on nanotube surfaces, within the framework of Anderson hybrid model. A special attention is given to the cases when Dirac-like 1D modes appear in the nanotube spectrum and their hybridization with localized impurity states produces, at growing impurity concentration cc, onset of a mobility gap near the impurity level and even opening, at yet higher cc, of some narrow delocalized range within this mobility gap. Such behaviors are compared with the similar effects in the previously studied 2D graphene and armchair type graphene nanoribbons. Some possible practical applications are discussed.

graphene, armchair and zigzag edges, carbon nanotubes, impurity adatoms, spectrum restructuring

I Introduction

From the discovery, 20 years ago, of single-layer graphene Geim2004 , an enormous interest has been attracted not only to its two-dimensionality (2D) Geim2005 but mainly to its massless, that is Dirac-like, spectrum of electronic excitations Geim2009 . Studies of its various physical properties have a very broad nomenclature Tomanek_Book ; Inagaki2014 (see also Katsnelson ) but we focus here on certain aspects of non-ideal graphene structures, yet restricted to a single dimension (1D), namely, of graphene nanoribbons (NR’s) Wakabayashi2010 and carbon nanotubes (NT’s) Iijima2002 ; Charlier2007 in presence of impurities Nevidomskyy ; Jalili ; Pumera ; Skrypnyk ; Vejpravova . Mostly, we consider here the electron quasiparticle spectra in principal topological types of graphene 1D nanosystems and their restructuring under effects by impurity atoms absorbed at different positions over carbon atoms Wehling2009 ; Araujo . In this course, the main attention is given to the cases when Dirac-like 1D modes are present in the NT spectrum Wakabayashi1996 and we compare the impurity disorder effects on such modes with those previously studied in 2D graphene YDV2021 and in armchair type nanoribbons (ANR’s) PL2022 . Also, the specifics of impurity effects in more general twisted carbon NT’s are shortly discussed. The main purpose of this analysis is in finding possibile practical applications for such 1D-like semi-metallic systems under thier properly adjusted doping as more compact and sensible analogues for common doped semiconductors.

The presentation is organized as follows. We begin from description of quasiparticle spectra for two basic NT topologies: zigzag (ZNT’s, Sec. II) and armchair (ANT’s, Sec. III), in the forms adjusted to describe the impurity induced restructuring of their spectra. This description, within the simplest T-matrix approximation for the quasi-particle self-energy, begins from the technically simpler ANT case (Sec. IV) and then extends to a more involved ZNT case (Sec. V). The next comparison with the previous results for 2D graphene and ANR’s (Sec. VI) reveals both qualitative similarities and some quantitative differences in their behaviors. At least, the general topology of twisted nanotubes (TNT’s) is discussed in Sec. VII, suggesting a qualitative difference between the twisted and non-twisted NT’s in their sensitivity to impurity disorder. The obtained results are then verified with some T-matrix improvements (Sec. VIII): the self-consistent T-matrix method and the group expansion (GE) method, both of them confirming validity of the simple T-matrix picture. The final discussion of these theoretical results and of some perspectives for their practical applications is given in Sec. IX.

II Zigzag nanotubes

Carbon NT’s can be obtained from carbon NR’s by closure of their edges (for instance, of basic zigzag or armchair types), and these nanotubes are usually classified by the normals to their axes (that is to the related NR edges). Thus, folding of an armchair nanoribbon (ANR) produces a ZNT and, vice versa, that of a zigzag nanoribbon (ZNR) does an ANT.

Beginning from the ANR case, it can be seen as a composite of nn chains (labeled by jj indices) of transversal period aa (the graphene lattice constant), each chain containing N1N\gg 1 segments (labeled by pp indices) of longitudinal period a3a\sqrt{3} and each segment including 4 atomic sites (labeled by ss indices, see Fig. 1).

Refer to caption
Figure 1: An armchair nanoribbon composed of nn atomic chains (jj-labeled), each chain consisting of segments (pp-labeled) with 4 atomic sites: s=1s=1 (red), 22 (green), 33 (white), 44 (blue), in each segment.

Next, the closure between the 1st and nnth chains of an ANR, transforms it into a ZNT (see Fig. 2).

Refer to caption
Figure 2: A zigzag nanotube formed by closing links between the 1st and nnth chains of the armchair nanoribbon in Fig. 1.

For the following consideration of electronic dynamics, it is suitable to combine the local Fermi operators ap,j,sa_{p,j,s} at 4 ss-sites from jjth chain in ppth segment into the 4-spinor:

ap,j=(ap,j;1ap,j;2ap,j;3ap,j;4).a_{p,j}=\left(\begin{array}[]{c}a_{p,j;1}\\ a_{p,j;2}\\ a_{p,j;3}\\ a_{p,j;4}\\ \end{array}\right). (1)

Then the longitudinal translation invariance (with the a3a\sqrt{3} period, see Fig. 1) and the discrete transversal rotation invariance of the obtained ZNT suggest the Fourier expansion of the local spinor components in quasi-continuous longitudinal momentum π/3<k<π/3-\pi/\sqrt{3}<k<\pi/\sqrt{3} and in discrete transversal wave number q=0,,n1q=0,\dots,n-1 (both in a1a^{-1} units):

ap,j,s=12nNk,qexp[i(3kps+2πqnjs)]αk,q,s.a_{p,j,s}=\frac{1}{2\sqrt{nN}}\sum_{k,q}\exp\left[i\left(\sqrt{3}kp_{s}+\frac{2\pi q}{n}j_{s}\right)\right]\alpha_{k,q,s}. (2)

Its components αk,q,s\alpha_{k,q,s} form the wave spinor αk,q\alpha_{k,q}. Here the longitudinal numbers for different ss-sites are: p1,2=p±1/6p_{1,2}=p\pm 1/6, p3,4=p±1/3p_{3,4}=p\pm 1/3 and their transversal numbers are: j1,2=jj_{1,2}=j, j3,4=j+1/2j_{3,4}=j+1/2. Then the ZNT Hamiltonian with only account of hopping between nearest neighbor atoms (its parameter, t2.8t\approx 2.8 eV Geim2009 , taken as the energy scale in what follows) is presented in terms of wave spinors as 111The common nearest neighbor hopping approximation stays practically insensible to the NT curvature at n1n\gg 1 since the distance to next-nearest neighbors there stays, within to 1/n2\sim 1/n^{2}, the same as in 2D graphene.:

HZNT=k,qαk,qH^k,qαk,q.H_{ZNT}=\sum_{k,q}\alpha_{k,q}^{\dagger}\hat{H}_{k,q}\alpha_{k,q}. (3)

Here the 4×44\times 4 matrix:

H^k,q=(0hk0hk,qhk0hk,q00hk,q0hkhk,q0hk0)\hat{H}_{k,q}=\left(\begin{array}[]{cccc}0&h_{k}&0&h_{k,q}^{\ast}\\ h_{k}^{\ast}&0&h_{k,q}&0\\ 0&h_{k,q}^{\ast}&0&h_{k}\\ h_{k,q}&0&h_{k}^{\ast}&0\end{array}\right) (4)

has its elements hk=eik/3h_{k}={\rm e}^{ik/\sqrt{3}} and hk,q=2eik/23cosπqnh_{k,q}=2{\rm e}^{ik/2\sqrt{3}}\cos\tfrac{\pi q}{n}. The ZNT spectrum results from four eigen-values of this matrix at given kk and qq as:

εk,q;1=εk,q;2=εk,q,\displaystyle\varepsilon_{k,q;1}=-\varepsilon_{k,q;2}=-\varepsilon_{k,q},
εk,q;3=εk,q;4=εk,nq,\displaystyle\qquad\varepsilon_{k,q;3}=-\varepsilon_{k,q;4}=-\varepsilon_{k,n-q}, (5)

with the basic dispersion law:

εk,q=1+4cos3k2cosπqn+4cos2πqn.\varepsilon_{k,q}=\sqrt{1+4\cos\tfrac{\sqrt{3}k}{2}\cos\tfrac{\pi q}{n}+4\cos^{2}\tfrac{\pi q}{n}}. (6)

This can be seen either as the standard graphene dispersion law Wallace but with discrete transversal momentum numbers qq or, otherwise, as a set of 4n4n 1D kk-bands εk,q;f\varepsilon_{k,q;f} (for nn possible values of qq and 4 values of ff). Notably, a double degeneracy of these bands follows from Eqs. 5, 6 as:

εk,q;1εk,nq;3,εk,q;2εk,nq;4.\varepsilon_{k,q;1}\equiv\varepsilon_{k,n-q;3},\quad\varepsilon_{k,q;2}\equiv\varepsilon_{k,n-q;4}. (7)

Thus, if nn is even, the ZNT spectrum has 4 non-degenerated (for q=0q=0 and q=n/2q=n/2) modes and 2n22n-2 doubly-degenerated ones. Otherwise, if nn is odd, there are two non-degenerated modes (only for q=0q=0) and 2n12n-1 doubly-degenerated ones. The eigen-operators ψk,q;f\psi_{k,q;f} of these modes enter the diagonal ANT Hamiltonian:

H=k,q,fεk,q;fψk,q;fψk,q;f.H=\sum_{k,q,f}\varepsilon_{k,q;f}\psi_{k,q;f}^{\dagger}\psi_{k,q;f}. (8)

These operators at given kk and qq can be also combined into the 4-spinor ψk,q\psi_{k,q}, related to the α\alpha-spinor as:

ψk,q=U^k,qαk,q,\psi_{k,q}=\hat{U}_{k,q}\alpha_{k,q}, (9)

through the unitary matrix:

U^k,q=12(zk,q1zk,q1zk,q1zk,q1zk,nq1zk,nq1zk,nq1zk,nq1),\hat{U}_{k,q}=\frac{1}{2}\left(\begin{array}[]{cccc}-z_{k,q}&-1&z_{k,q}&1\\ z_{k,q}&-1&-z_{k,q}&1\\ -z_{k,n-q}&1&-z_{k,n-q}&1\\ z_{k,n-q}&1&z_{k,n-q}&1\end{array}\right),

with the complex phase factor

zk,q=exp[i(k3+arctansink232cosπqncosk23)].z_{k,q}=\exp\left[i\left(\frac{k}{\sqrt{3}}+\arctan\frac{\sin\tfrac{k}{2\sqrt{3}}}{2\cos\tfrac{\pi q}{n}-\cos\tfrac{k}{2\sqrt{3}}}\right)\right].

Contrariwise, the α\alpha-spinor follows from the ψ\psi-spinor by the inversion of Eq. 9:

αk,q=U^k,qψk,q.\alpha_{k,q}=\hat{U}_{k,q}^{\dagger}\psi_{k,q}. (10)

Another important features of the ZNT spectrum by Eq. 5 are:

i) presence of 2 flat (dispersionless) modes for even nn (then at q=n/2q=n/2) and

ii) presence of 4 gapless Dirac-like modes (DLM’s) for nn being a multiple of 3 (then at q=n/3q=n/3 and q=2n/3q=2n/3).

The latter are just the 1D analogs to the 2D graphene Dirac modes with their nodal points KK (here at k=2π/3,q=n/3k=2\pi/\sqrt{3},\,q=n/3) and KK^{\prime} (here at k=0,q=2n/3k=0,\,q=2n/3), also they are fully analogous to DLM’s in ANR PL2022 .

Due to the DLM’s special sensitivity to local impurity perturbations, our following treatment is mainly focused on these modes. In this course, the most relevant energy range is the Dirac window (DW), exclusively occupied with DLM’s and delimited by the inner edges of their nearest neighbor modes (Fig. 3). From Eq. 6, this window results of width:

ΔDW=2|1cosπn3sinπn|,\Delta_{\rm DW}=2\left|1-\cos\frac{\pi}{n}-\sqrt{3}\sin\frac{\pi}{n}\right|, (11)

and with growing n1n\gg 1 it is narrowing as 23π/n\sim 2\sqrt{3}\pi/n.

Refer to caption
Figure 3: Dispersion laws for ZNT of n=6n=6 chains, with doubly-degenerated (black) and non-degenerated (red) modes, the Dirac window of width ΔDW=2(31)\Delta_{\rm DW}=2(\sqrt{3}-1) is in between the shaded ranges of the resting modes.

Now, considering the low-energy spectrum range, the expansion of local operators by Eqs. 2, 10 can be restricted to 8 K,KK,K^{\prime} DLM’s which share 4 eigen-energies:

εk,K,1=εk,K,2=εk,K,1\displaystyle\varepsilon_{k,K,1}=-\varepsilon_{k,K,2}=-\varepsilon_{k,K^{\prime},1}
=εk,K,2=2sin3k4,\displaystyle\qquad\qquad\qquad=\varepsilon_{k,K^{\prime},2}=2\sin\frac{\sqrt{3}k}{4},
εk,K,3=εk,K,4=εk,K,3\displaystyle\varepsilon_{k,K,3}=-\varepsilon_{k,K,4}=-\varepsilon_{k,K^{\prime},3}
=εk,K,4=2cos3k4.\displaystyle\qquad\qquad\qquad=\varepsilon_{k,K^{\prime},4}=2\cos\frac{\sqrt{3}k}{4}. (12)

Thus, the restricted expansion of a local spinor in eigen-spinors is presented in the form:

ap,j=12nNkei3kp(ei2π3jUk,Kψk,K\displaystyle a_{p,j}=\frac{1}{2\sqrt{nN}}\sum_{k}\,{\rm e}^{i\sqrt{3}kp}\left({\rm e}^{i\tfrac{2\pi}{3}j}U_{k,K}^{\dagger}\psi_{k,K}\right.
+ei4π3jUk,Kψk,K),\displaystyle\qquad\qquad\qquad\qquad+\left.{\rm e}^{i\tfrac{4\pi}{3}j}U_{k,K^{\prime}}^{\dagger}\psi_{k,K^{\prime}}\right), (13)

including the unitary matrices:

U^k,K\displaystyle\hat{U}_{k,K} =\displaystyle= 12(izk1izk1izk1izk1zk1zk1zk1zk1),\displaystyle\frac{1}{2}\left(\begin{array}[]{cccc}-iz_{k}&-1&iz_{k}&1\\ iz_{k}&-1&-iz_{k}&1\\ z_{k}&1&z_{k}&1\\ -z_{k}&1&-z_{k}&1\end{array}\right), (18)
U^k,K\displaystyle\hat{U}_{k,K^{\prime}} =\displaystyle= 12(zk1zk1zk1zk1izk1izk1izk1izk1)\displaystyle\frac{1}{2}\left(\begin{array}[]{cccc}-z_{k}&-1&z_{k}&1\\ z_{k}&-1&-z_{k}&1\\ -iz_{k}&1&-iz_{k}&1\\ iz_{k}&1&iz_{k}&1\end{array}\right) (23)

with zk=eik/23z_{k}={\rm e}^{ik/2\sqrt{3}}. This expansion is suitable for the following construction of impurity perturbation Hamiltonian.

III Armchair nanotubes

For the case of ANT we also consider its structure obtained from an nn-chain ZNR (Fig. 4) by closure between its 1st and nnth chains (Fig. 5).

Refer to caption
Figure 4: A zigzag nanoribbon of j=1,,nj=1,\dots,n chains, with s=1s=1 (blue), 2 (green), 3 (red), and 4 (white) sites in each ppth segment.
Refer to caption
Figure 5: An nn-chain armchair nanotube formed by closure between the 1st and nnth chains of zigzag nanoribbon from Fig. 4.

Comparison of Fig. 4 with Fig. 1 readily shows that the ANT elementary cell results just from 90 degrees rotation of the ZNT one, so the analysis of ANT spectra simply follows that for ZNT but with the 3k2πq/n\sqrt{3}k\longleftrightarrow 2\pi q/n interchange. Thus the ANT Hamiltonian in terms of 4-spinor wave operators results, in analogy with the ZNT form by Eq. 2, as:

HANT=k,qαk,qH^q,kαk,q,H_{ANT}=\sum_{k,q}\alpha_{k,q}^{\dagger}\hat{H}_{q,k}\alpha_{k,q}, (24)

where the 4×44\times 4 matrix:

H^q,k=(0hq0hq,khq0hq,k00hq,k0hqhq,k0hq0)\hat{H}_{q,k}=\left(\begin{array}[]{cccc}0&h_{q}&0&h_{q,k}^{\ast}\\ h_{q}^{\ast}&0&h_{q,k}&0\\ 0&h_{q,k}^{\ast}&0&h_{q}\\ h_{q,k}&0&h_{q}^{\ast}&0\end{array}\right) (25)

has its elements hq=ei2πq/3nh_{q}={\rm e}^{i2\pi q/3n} and hq,k=2eiπq/3ncosk/2h_{q,k}=2{\rm e}^{i\pi q/3n}\cos k/2. The ANT spectrum at given kk and qq results from the indicated interchange in Eqs. 5, 6, as:

εq,k;1=εq,k;2=εq,k,\displaystyle\varepsilon_{q,k;1}=-\varepsilon_{q,k;2}=-\varepsilon_{q,k},
εq,k;3=εq,k;4=εnq,k,\displaystyle\qquad\varepsilon_{q,k;3}=-\varepsilon_{q,k;4}=-\varepsilon_{n-q,k}, (26)

where:

εq,k=1+4cosπqncosk2+4cos2k2.\varepsilon_{q,k}=\sqrt{1+4\cos\tfrac{\pi q}{n}\cos\tfrac{k}{2}+4\cos^{2}\tfrac{k}{2}}. (27)

This spectrum includes the same numbers of non-degenerated and doubly degenerated eigen-modes as in the above considered ZNT case. But it differs from that case by:

i) absence of flat modes and

ii) presence of two Dirac nodal points: k=2π/3k=2\pi/3 (KK) and k=2π/3k=-2\pi/3 (KK^{\prime}) at the same q=0q=0 and for any ANT width nn value. Notably, the related two DLM’s are non-degenerated (compare with Eq. 12):

ε0,k;3=ε0,k,4εk=12cosk2.\varepsilon_{0,k;3}=-\varepsilon_{0,k,4}\equiv\varepsilon_{k}=1-2\cos\tfrac{k}{2}. (28)

For the ANT case, the DW width results ΔDW=2sinπ/n\Delta_{\rm DW}=2\sin\pi/n, that is narrowing with n1n\gg 1 as ΔDLM2π/n\Delta_{\rm DLM}\sim 2\pi/n (to be compared with the ZNT case by Eq. 11).

Refer to caption
Figure 6: Dispersion laws for ANT of n=6n=6 chains, with doubly-degenerated (black) and non-degenerated (red) modes. The Dirac window of width ΔDW=1\Delta_{\rm DW}=1 is more narrow than for the ZNT in Fig. 3

It should be also noted that, unlike a complete similarity between the ZNT and ANR spectra, there is an important difference between those for ANT and ZNR (the latter having no DLM’s at all but presenting instead a special edge mode Nakada1996 , PL2022 ).

Then the expansion of local operators (an analog to Eq. 13), reduced to only DLM eigen-operators, results as:

ap,j,s=12nNkeikpsusψk,a_{p,j,s}=\frac{1}{2\sqrt{nN}}\sum_{k}{\rm e}^{ikp_{s}}u_{s}^{\dagger}\psi_{k}, (29)

with 2-spinors:

ψk=(ψ0,k;3ψ0,k;4),u1=(11)=u3,\displaystyle\psi_{k}=\left(\begin{array}[]{c}\psi_{0,k;3}\\ \psi_{0,k;4}\end{array}\right),\,u_{1}=\left(\begin{array}[]{c}-1\\ 1\end{array}\right)=-u_{3}, (34)
u2=(11)=u4.\displaystyle\qquad\qquad\quad u_{2}=\left(\begin{array}[]{c}-1\\ -1\end{array}\right)=-u_{4}. (37)

Due to relative simplicity of expansions by Eq. 29 in only 2 DLM’s, compared to the ZNT case by Eq. 13 with up to 8 DLM’s, we begin the next consideration of impurity effects just from the ANT case.

IV Impurity effects on ANT

Now we can consider impurity effects on the above described NT’s. The simplest Lifshitz isotopic perturbation model Lifshitz is known not to produce impurity resonance effects in NR’s, both in ANR and ZNR PL2022 , therefore we begin from the more effective Anderson hybrid model Anderson , presenting its perturbation Hamiltonian for the ANT case (with use of 2-spinors by Eq. 29) as:

HAZ\displaystyle H_{\rm AZ} =\displaystyle= σ[εresbσbσ\displaystyle\sum_{\sigma}\left[\varepsilon_{res}b_{\sigma}^{\dagger}b_{\sigma}\right. (38)
+\displaystyle+ γ2nNk(eikpσbσusσψk+h.c.)].\displaystyle\left.\frac{\gamma}{2\sqrt{nN}}\sum_{k}\left({\rm e}^{ikp_{\sigma}}b_{\sigma}^{\dagger}u_{s_{\sigma}}^{\dagger}\psi_{k}+{\rm h.c.}\right)\right].

It describes impurity adatoms with their resonance energy εres\varepsilon_{res} (laying inside the host DLM range) and corresponding local Fermi operators bσb_{\sigma} at random positions σ\sigma, linked through the hybridization parameter γ\gamma to its nearest neighbor host atom at sσs_{\sigma} site in pσp_{\sigma} segment of jσj_{\sigma} chain (see Fig. 7). The random pσp_{\sigma}, jσj_{\sigma}, and sσs_{\sigma} values are distributed uniformly with a low overall concentration: c=(4nN)1σ11c=(4nN)^{-1}\sum_{\sigma}1\ll 1.

Refer to caption
Figure 7: A fragment of ANT with σ\sigma-th impurity adatom (orange) linked by hybridization γ\gamma to its nearest neighbor host atom (green) at the (pσ,jσ,sσp_{\sigma},j_{\sigma},s_{\sigma})-site.

The next consideration goes in terms of (advanced) Green’s functions (GF’s) whose Fourier-transform in energy:

A|Bε=iπ0ei(εi0)t{A(t),B(0)}𝑑t.\langle\langle A|B\rangle\rangle_{\varepsilon}=\frac{i}{\pi}\int_{-\infty}^{0}{\rm e}^{i(\varepsilon-i0)t}\langle\left\{A(t),B(0)\right\}\rangle dt. (39)

includes the grand-canonical statistical average: O=Tr[e(Hμ)/kBTOH(t)]/Tr[e(Hμ)/kBT]\langle O\rangle={\rm Tr}\,\left[{\rm e}^{-(H-\mu)/k_{\mathrm{B}}T}O_{H}(t)\right]\bigl{/}\,{\rm Tr}\,\left[{\rm e}^{-(H-\mu)/k_{\mathrm{B}}T}\right] of a Heisenberg operator O(t)=eiHtOeiHtO(t)={\rm e}^{iHt}O{\rm e}^{-iHt} under a Hamiltonian HH with chemical potential μ\mu and the anticommutator {.,.}\{.,.\}.

As known Zubarev1960 ; Economou1979 , GF’s satisfy the equation of motion:

εA|Bε={A(0),B(0)}+[A,H]|Bε.\varepsilon\langle\langle A|B\rangle\rangle_{\varepsilon}=\langle\left\{A(0),B(0)\right\}\rangle+\langle\langle[A,H]|B\rangle\rangle_{\varepsilon}. (40)

In what follows the energy sub-index at GF’s is mostly omitted (or enters directly as its argument).

Consider now the GF 2×22\times 2 matrix G^(k,k)=ψk|ψk\hat{G}(k,k^{\prime})=\langle\langle\psi_{k}|\psi_{k^{\prime}}^{\dagger}\rangle\rangle made of ψ\psi-spinors by Eq. 29. In absence of impurities, with use of the Hamiltonian HH by Eq. 3, the explicit solution for this GF turns kk-diagonal: G^(k,k)δk,kG^(0)(k)\hat{G}(k,k^{\prime})\to\delta_{k,k^{\prime}}\hat{G}^{(0)}(k), where

G^0(k)=(εεkτ^3)1\hat{G}_{0}(k)=\left(\varepsilon-\varepsilon_{k}\hat{\tau}_{3}\right)^{-1} (41)

with the Pauli matrix τ^3\hat{\tau}_{3}.

When passing to the disordered system with its Hamiltonian extended to H+HAZH+H_{\rm AZ}, we get the equation of motion for the kk-diagonal GF matrix, G^(k,k)G^(k)\hat{G}(k,k)\equiv\hat{G}(k):

G^(k)=G^0(k)+γ2nNσeikpσG^0(k)usσbσ|ψk,\hat{G}(k)=\hat{G}_{0}(k)+\frac{\gamma}{2\sqrt{nN}}\sum_{\sigma}{\rm e}^{-ikp_{\sigma}}\hat{G}_{0}(k)u_{s_{\sigma}}\langle\langle b_{\sigma}|\psi_{k}^{\dagger}\rangle\rangle, (42)

and then its solution is generally sought in the self-energy form:

G^(k)=(G^01(k)Σ^k)1,\hat{G}(k)=\left(\hat{G}_{0}^{-1}(k)-\hat{\Sigma}_{k}\right)^{-1}, (43)

including the self-energy matrix Σ^k\hat{\Sigma}_{k}. To find it, we continue the chain of equations of motion, now for the mixed (impurity-DLM) row-vector GF:

bσ|ψk(εεres)=γ2nNkeikpσusσG^(k,k).\langle\langle b_{\sigma}|\psi_{k}^{\dagger}\rangle\rangle(\varepsilon-\varepsilon_{res})=\frac{\gamma}{2\sqrt{nN}}\sum_{k^{\prime}}{\rm e}^{ik^{\prime}p_{\sigma}}u_{s_{\sigma}}^{\dagger}\hat{G}(k^{\prime},k). (44)

This gives the first contribution to Σ^k\hat{\Sigma}_{k} from its term with k=kk^{\prime}=k used in Eq. 42:

γ24nNσusσusσεεres=cγ2εεres.\frac{\gamma^{2}}{4nN}\sum_{\sigma}\frac{u_{s_{\sigma}}u_{s_{\sigma}}^{\dagger}}{\varepsilon-\varepsilon_{res}}=\frac{c\gamma^{2}}{\varepsilon-\varepsilon_{res}}. (45)

It is then extended by writing down the equation of motion for the resting terms with kkk^{\prime}\neq k in the r.h.s. of Eq. 44:

G^(k,k)=γ2nNσeikpσ\displaystyle\hat{G}(k^{\prime},k)=\frac{\gamma}{2\sqrt{nN}}\sum_{\sigma^{\prime}}{\rm e}^{-ik^{\prime}p_{\sigma^{\prime}}}
×G^0(k)usσbσ|ψk,\displaystyle\qquad\qquad\qquad\times\,\hat{G}_{0}(k^{\prime})u_{s_{\sigma^{\prime}}}\langle\langle b_{\sigma^{\prime}}|\psi_{k}^{\dagger}\rangle\rangle, (46)

and choosing the term with σ=σ\sigma^{\prime}=\sigma in its r.h.s. This generates the (scalar) impurity self-energy Σ0=γ2G0\Sigma_{0}=\gamma^{2}G_{0} with the DLM locator GF:

G0=14nNkusσG^0(k)usσ=14nNkTrG^0(k),G_{0}=\frac{1}{4nN}\sum_{k}u_{s_{\sigma}}^{\dagger}\hat{G}_{0}(k)u_{s_{\sigma}}=\frac{1}{4nN}\sum_{k}{\rm Tr}\hat{G}_{0}(k), (47)

which enters the modified factor (εεresΣ0)(\varepsilon-\varepsilon_{res}-\Sigma_{0}) in Eq. 44. Then the solution for G^(k)\hat{G}(k) in the simplest T-matrix approximation for self-energy reads:

G^(k)=[εcT(ε)τ^0εkτ^3]1,\hat{G}(k)=\left[\varepsilon-cT(\varepsilon)\hat{\tau}_{0}-\varepsilon_{k}\hat{\tau}_{3}\right]^{-1}, (48)

with the scalar T-matrix:

T(ε)=γ2εεresΣ0.T(\varepsilon)=\frac{\gamma^{2}}{\varepsilon-\varepsilon_{res}-\Sigma_{0}}. (49)

The next important GF, the DLM locator, is calculated by usual passing from kk-summation to integration:

G0(ε)=ε4nπ02πdkε2εk2.G_{0}(\varepsilon)=\frac{\varepsilon}{4n\pi}\int_{0}^{2\pi}\frac{dk}{\varepsilon^{2}-\varepsilon_{k}^{2}}. (50)

Its analytic expression (see Appendix) is:

G0(ε)=i4n{θ[(1ε)(3+ε)](3+ε)(1ε)\displaystyle G_{0}(\varepsilon)=\frac{i}{4n}\left\{\frac{\theta\left[(1-\varepsilon)(3+\varepsilon)\right]}{\sqrt{(3+\varepsilon)(1-\varepsilon)}}\right.
+θ[(1+ε)(3ε)](3ε)(1+ε)},\displaystyle\qquad\qquad\qquad\qquad+\left.\frac{\theta\left[(1+\varepsilon)(3-\varepsilon)\right]}{\sqrt{(3-\varepsilon)(1+\varepsilon)}}\right\}, (51)

approximated in the low-energy range as:

G0(ε)i2n3(1+ε23).G_{0}(\varepsilon)\approx\frac{i}{2n\sqrt{3}}\left(1+\frac{\varepsilon^{2}}{3}\right). (52)

More generally, the DLM locator is defined as

G(ε)=14πNkTrG^(k),G(\varepsilon)=\frac{1}{4\pi N}\sum_{k}{\rm Tr}\,\hat{G}(k), (53)

with the diagonal GF matrix G^(k)\hat{G}(k) by Eq. 43. Within the T-matrix approximation by Eq. 48, it results simply as:

G(ε)=G0(ε~),G(\varepsilon)=G_{0}(\tilde{\varepsilon}), (54)

with ε~=εcT(ε)\tilde{\varepsilon}=\varepsilon-cT(\varepsilon) used instead of ε\varepsilon in Eqs. 51 or 52. The resulting G(ε)G(\varepsilon) real and imaginary parts as shown in Fig. 8 for the choice of Cu impurities with εres=0.03\varepsilon_{res}=0.03, γ=0.3\gamma=0.3 Irmer2018 and c=0.08c=0.08 only slightly differ from those for unperturbed G0(ε)G_{0}(\varepsilon) within the |εεres|γ2|G0||\varepsilon-\varepsilon_{res}|\lesssim\gamma^{2}|G_{0}| range.

Refer to caption
Figure 8: Real (blue) and imaginary (black) parts of the locator function G(ε)G(\varepsilon) compared to those by the unperturbed G0(ε)G_{0}(\varepsilon) (dashed) for ANT with n=12n=12 at Cu impurity concentration c=0.08c=0.08.

Another set of elementary excitations in the disordered system, that due to impurity atoms, defines the impurity locator GF: Gimp=N1σbσ|bσG_{imp}=N^{-1}\sum_{\sigma}\langle\langle b_{\sigma}|b_{\sigma}^{\dagger}\rangle\rangle, and its solution in the same approximation reads:

Gimp(ε)=cT(ε)/γ2.G_{imp}(\varepsilon)=cT(\varepsilon)/\gamma^{2}. (55)

Together, the DLM and impurity locators, Eqs. 54, 55, define the low-energy density of states (DOS) as ρ(ε)=ρh(ε)+ρimp(ε)\rho(\varepsilon)=\rho_{h}(\varepsilon)+\rho_{imp}(\varepsilon) with its host and impurity parts:

ρh(ε)=2πImG(ε),ρimp(ε)=2πImGimp(ε)\rho_{h}(\varepsilon)=\frac{2}{\pi}\,{\rm Im}\,G(\varepsilon),\quad\rho_{imp}(\varepsilon)=\frac{2}{\pi}\,{\rm Im}\,G_{imp}(\varepsilon) (56)

(taking the account of 2 spin values).

Refer to caption
Figure 9: DOS parts near the impurity resonance level for the same system as in Fig. 8.

In a disordered ANT, host DLM’s contribute with 1/n1/n charge carriers per site and impurities do with cc carriers per site, so defining the Fermi level εF\varepsilon_{\rm F} from the equation:

1n+c=3εFρ(ε)𝑑ε\frac{1}{n}+c=\int_{-3}^{\varepsilon_{\rm F}}\rho(\varepsilon)d\varepsilon (57)

(integrated from the bottom of DLM range). Then, in the simplest approximation of ImG(ε)ImG0(ε)2/(3πn)G(\varepsilon)\approx{\rm Im}G_{0}(\varepsilon)\approx 2/(\sqrt{3}\pi n) (dashed line in Fig. 9), the Fermi level dependence on impurity concentration cc results:

εF(c)cc+cεres,\varepsilon_{\rm F}(c)\approx\frac{c}{c+c_{\ast}}\,\varepsilon_{res}, (58)

where c=[γG0(εres)]2c_{\ast}=[\gamma G_{0}(\varepsilon_{res})]^{2}. Its fast initial growth: εF(c)(c/c)εres\varepsilon_{\rm F}(c)\approx(c/c_{\ast})\varepsilon_{res} at ccc\lesssim c_{\ast}, changes to a slow approach of εres\varepsilon_{res}: εF(c)εres(c/c)εres\varepsilon_{\rm F}(c)\approx\varepsilon_{res}-(c_{\ast}/c)\varepsilon_{res} at ccc\gtrsim c_{\ast} (see Fig. 10).

Refer to caption
Figure 10: Fermi level in function of impurity concentration for the system by Figs. 8, 9.

The next analysis of low energy spectra in this disordered system follows the lines of similar cases by Refs. ILP1987 ; Pogorelov2020 ; PL2022 . Thus, the modified dispersion laws are obtained from the standard equation Bonch :

RedetG^1(k)=0,{\rm Re}\det\hat{G}^{-1}(k)=0, (59)

which splits in two scalar equations:

εcReT(ε)=±εk.\varepsilon-c\,{\rm Re}\,T(\varepsilon)=\pm\varepsilon_{k}. (60)

They appear as cubic equations for energy in function of momentum, ε(k)\varepsilon(k), and their analytic solutions, though standard, are rather cumbersome. But they can be greatly simplified within the relevant low energy range by using the linearized dispersion law:

εk32k\varepsilon_{k}\approx\frac{\sqrt{3}}{2}k (61)

with momentum kk referred to the Dirac point and Fermi velocity 3/2\sqrt{3}/2, and solving Eq. 60 for this momentum in function of energy PL2022 :

±kε=± 2εcReT(ε)3.\pm k_{\varepsilon}=\pm\,2\,\frac{\varepsilon-c\,{\rm Re}\,T(\varepsilon)}{\sqrt{3}}. (62)

An example of such solutions for ANT with n=12n=12 and c=0.08c=0.08 in Fig. 11 demonstrates how coupling of each ±εk\pm\varepsilon_{k} mode to the impurity εres\varepsilon_{res} mode forms resonance splitting of hybridized ±ε1k\pm\varepsilon_{1k} and ±ε2k\pm\varepsilon_{2k} modes at k=0k=0 to the interval of εres2+4cγ2\approx\sqrt{\varepsilon_{res}^{2}+4c\gamma^{2}} around εres/2\varepsilon_{res}/2.

Refer to caption
Figure 11: Modified dispersion laws ε1,k\varepsilon_{1,k} and ε2,k\varepsilon_{2,k} by Eq. 62 for for the system as in Figs. 8-10 compared to the unperturbed εk\varepsilon_{k} and to the impurity level εres\varepsilon_{res} (the momentum kk being referred to the KK-point). The mobility gaps (shadowed), define the mobility edges k1,mink_{1,min}, k2,mink_{2,min}, and k2,maxk_{2,max} for quasiparticle momenta.

Next, this kεk_{\varepsilon}-form is used in the important test of dispersion law validity for a disordered system, the Ioffe-Regel-Mott (IRM) criterion IoffeRegel ; Mott :

kεvετ1(ε),k_{\varepsilon}v_{\varepsilon}\gtrsim\tau^{-1}(\varepsilon), (63)

with the quasiparticle group velocity vε=(kε/ε)1v_{\varepsilon}=(\partial k_{\varepsilon}/\partial\varepsilon)^{-1} and its inverse lifetime τε1=cImT(ε)\tau_{\varepsilon}^{-1}=c\,{\rm Im}\,T(\varepsilon), that is the quasiparticle mean free path to be longer of its wavelength.

Each ε\varepsilon value that converts \gtrsim into \approx in Eq. 63 gives an estimate for a mobility edge εmob\varepsilon_{mob}, separating the ranges of band-like and localized states in the spectrum. An important rule for these states in a multi-mode system is that they can not coexist, that is, if, for a certain energy, the IRM criterion does not hold for at least one mode, all other modes at this energy should be also localized Mott .

With use of Eqs. 62, 49, such equation for mobility edges can be written explicitly in the form:

cγ2ΓD2(ε)|1+cγ2D2(ε)2Γ2D4(ε)||εcγ2εεresD2(ε)|\frac{c\gamma^{2}\Gamma}{D^{2}(\varepsilon)}\left|1+c\gamma^{2}\frac{D^{2}(\varepsilon)-2\Gamma^{2}}{D^{4}(\varepsilon)}\right|\approx\left|\varepsilon-c\gamma^{2}\frac{\varepsilon-\varepsilon_{res}}{D^{2}(\varepsilon)}\right| (64)

with D2(ε)=(εεres)2+Γ2D^{2}(\varepsilon)=(\varepsilon-\varepsilon_{res})^{2}+\Gamma^{2} and Γ=γ2G0(ε)\Gamma=\gamma^{2}G_{0}(\varepsilon). Then, using the G0(ε)G_{0}(\varepsilon) value by Eq. 51, this equation can be solved numerically to estimate all possible εmob\varepsilon_{mob} values and so delimit the band-like and localized energy ranges in ZNT with impurities at given disorder parameters (εres\varepsilon_{res}, γ\gamma, cc) and of NT structure (nn) as shown in Fig. 11.

Here one localized range is found at the lower limit of resonance splitting, near the shifted Dirac energy εs-\varepsilon_{s} at all c>0c>0, being of width cγ2/εres\approx c\gamma^{2}/\varepsilon_{res}. Another localized range emerges above it, around εres\varepsilon_{res}, when cc reaches a certain critical value c0c_{0}. And at yet higher critical concentration, c1c0c_{1}\gg c_{0}, the latter range gets split in two, due to a specific interplay (when going away from the Dirac point) between the growing momentum kεk_{\varepsilon}, decreasing group velocity vkv_{k}, and increasing inverse lifetime τε1\tau_{\varepsilon}^{-1} of hybridized modes. A more detailed description of these restructured spectra for different nanostructures follows below.

V Impurity effects on ZNT

It is also of interest to extend the above approach to another NT topology, namely, to the more involved ZNT case. To simplify description of low energy impurity resonances here, we again restrict the expansions of local operators by Eqs. 2 and 9 in 4-spinors ψ(k,q)\psi(k,q) with unitary matrices U^(k,q)\hat{U}(k,q), to only DLM’s q=K,Kq=K,K^{\prime}. Then the ZNT perturbation Hamiltonian results, instead of Eq. 38 for ZNT, in the form:

HZ=σεresbσbσ+γ2nNk,σ{eikpσbσ\displaystyle H_{\rm Z}=\sum_{\sigma}\varepsilon_{res}b_{\sigma}^{\dagger}b_{\sigma}+\frac{\gamma}{2\sqrt{nN}}\sum_{k,\sigma}\left\{{\rm e}^{ikp_{\sigma}}b_{\sigma}^{\dagger}\right.
×[eiKjσ[u(k,K;σ)ψ(k,K)]jσ\displaystyle\times\left[{\rm e}^{iKj_{\sigma}}[u^{\dagger}(k,K;\sigma)\psi(k,K)]_{j_{\sigma}}\right.
+eiKjσ[u(k,K;σ)ψ(k,K)]jσ]+h.c.},\displaystyle\left.\left.+\,{\rm e}^{iK^{\prime}j_{\sigma}}[u^{\dagger}(k,K^{\prime};\sigma)\psi(k,K^{\prime})]_{j_{\sigma}}\right]+{\rm h.c.}\right\}, (65)

where the row spinor u(k,q;σ)u^{\dagger}(k,q;\sigma) is just the jσj_{\sigma}-th row of U^(k,q)\hat{U}^{\dagger}(k,q).

Next we consider the 4×\times4 GF matrices G^(k,q;k,q)ψk,q|ψk,q\hat{G}(k,q;k^{\prime},q^{\prime})\equiv\langle\langle\psi_{k,q}|\psi_{k^{\prime},q^{\prime}}^{\dagger}\rangle\rangle and the related equation of motion with the Hamiltonian H+HZH+H_{\rm Z} for the choice of KK-modes GF:

G^(k,K;k,K)=δk,kG^(0)(k,K)\displaystyle\hat{G}(k,K;k^{\prime},K)=\delta_{k,k^{\prime}}\hat{G}^{(0)}(k,K)
+γ2nNσei(kpσ+Kjσ)G^0(k,K)\displaystyle\qquad+\frac{\gamma}{2\sqrt{nN}}\sum_{\sigma}{\rm e}^{-i(kp_{\sigma}+Kj_{\sigma})}\hat{G}_{0}(k,K)
×u(k,K;σ)bσ|ψk,K,\displaystyle\qquad\qquad\qquad\times\,u(k,K;\sigma)\langle\langle b_{\sigma}|\psi_{k^{\prime},K}^{\dagger}\rangle\rangle, (66)

where Gf,f(0)(k,K)=δf,f(εεk,K,f)1G_{f,f^{\prime}}^{(0)}(k,K)=\delta_{f,f^{\prime}}(\varepsilon-\varepsilon_{k,K,f})^{-1} and the column spinor u(k,q;σ)u(k,q;\sigma) is the jσj_{\sigma}-th column of U^(k,q)\hat{U}(k,q).

Then the equation (similar to Eq. 44 for the ZNT case) for the mixed GF, bσ|ψk,K\langle\langle b_{\sigma}|\psi_{k^{\prime},K}^{\dagger}\rangle\rangle:

bσ|ψk,K(εεres)=γ2nNκ′′ei(k′′pσ+Kjσ)\displaystyle\langle\langle b_{\sigma}|\psi_{k^{\prime},K}^{\dagger}\rangle\rangle\left(\varepsilon-\varepsilon_{res}\right)=\frac{\gamma}{2\sqrt{nN}}\sum_{\kappa^{\prime\prime}}{\rm e}^{i(k^{\prime\prime}p_{\sigma}+Kj_{\sigma})}
×u(k′′,K;σ)G^(k′′,k)\displaystyle\qquad\qquad\qquad\qquad\times u^{\dagger}(k^{\prime\prime},K;\sigma)\hat{G}(k^{\prime\prime},k^{\prime}) (67)

leads (in the same way as to Eq. 48) to the T-matrix solution for momentum-diagonal GF matrix G^(k,K)G^(k,K;k,K)\hat{G}(k,K)\equiv\hat{G}(k,K;k,K):

G^(k,K)={[G^(0)(k,K)]1cT(ε)}1\hat{G}(k,K)=\left\{\left[\hat{G}^{(0)}(k,K)\right]^{-1}-cT(\varepsilon)\right\}^{-1} (68)

where the T-function for this case differs from that by Eq. 49 only by the form of its locator G0(ε)G_{0}(\varepsilon). Using Eq. 12, it results here as:

G0(ε)=4in1(ε/2)2.G_{0}(\varepsilon)=\frac{4i}{n\sqrt{1-(\varepsilon/2)^{2}}}. (69)

Then comparison with Eq. 51 shows that the impurity level damping for this case turns 83\approx 8\sqrt{3} times stronger than for ANT at the same nn number, mostly due to the above indicated greater relative weight of DLM’s in ZNT than in ANT spectra. This produces strongly different behaviors of IRM mobility edges and qualitatively different structures of localized and band-like spectra in these two nanosystems.

VI Comparison with other carbon nanosystems

Refer to caption
Refer to caption
Refer to caption
Refer to caption
Figure 12: Development of localized ranges (shadowed) in quasiparticle spectra of: 2D graphene, armchair nanotube (with a narrow blue range of divergence for GF group expansion, see Sec. VIII), armchair nanoribbon, and zigzag nanotube with growing Cu impurity concentration.

The low-energy spectrum restructuring under impurity disorder effect is suitably illustrated by a diagram of mobility edges εmob\varepsilon_{mob} between the localized and band-like energy ranges in function of impurity concentration cc. Such diagrams in Fig. 12 permit to compare the effects of Cu impurities on Dirac modes in the previously considered 2D graphene Pogorelov2020 and ANRs PL2022 together with the above obtained results for ZNT and ANT.

Some general features, noted for the ANT case, are observed in all of them: i) formation of a localized range (mobility gap) around the resonance level εres\varepsilon_{res}, at reaching a certain critical concentration c0c_{0}, ,

ii) presence of another localized range around the shifted down Dirac level εD\varepsilon_{D}, being mostly narrower but existing at all c>0c>0,

iii) opening, at a certain higher critical concentration c1c0c_{1}\gg c_{0}, of a narrow band range within the εres\varepsilon_{res}-related mobility gap.

But this comparison also reveals notably different sensitivity of the corresponding DLM’s to the impurity resonance level, depending both on their topological properties (absence or presence of edges and the edge types) and on discrete transversal numbers of chains in a system. Within the IRM formalism, for given impurity parameters εres\varepsilon_{res} and γ\gamma, it depends on the host system through its locator function G0(ε)G_{0}(\varepsilon), like those by Eqs. 51, 69. This can be further compared with the previously found G0(ε)G_{0}(\varepsilon) values for 2D graphene: ε/3\varepsilon/\sqrt{3} YDV2021 and for ANR with MM carbon chains: 4/(M+1)4/(M+1) PL2022 .

Thus, the impurity-induced localization first occurs at an energy very close to εres\varepsilon_{res} and the related critical concentration c0c_{0} can be estimated from Eq. 64 by setting ε=εres\varepsilon=\varepsilon_{res} there. It results generally in:

c0=[γG0(εres)]22[1+1+4εresγ2G0(εres)],c_{0}=\frac{[\gamma G_{0}(\varepsilon_{res})]^{2}}{2}\left[1+\sqrt{1+4\frac{\varepsilon_{res}}{\gamma^{2}G_{0}(\varepsilon_{res})}}\right], (70)

and for the instance of ANT with n=12n=12 it gives c01.7104c_{0}\approx 1.7\cdot 10^{-4} in a reasonable agreement with the numerical calculation result shown in Fig. 12. With further growth of c>c0c>c_{0}, a continuous range of localized states (mobility gap) appears around εres\varepsilon_{res}, of width growing as Δmobγcc0\Delta_{mob}\sim\gamma\sqrt{c-c_{0}}.

Then, at reaching another critical concentration c1c0c_{1}\gg c_{0}, a certain window of band-like states opens inside the mobility gap, due to the before discussed faster resonance splitting between the initial εk\varepsilon_{k} and εres\varepsilon_{res} modes than these split modes damping. This c1c_{1} value is also estimated from the numerical solution of IRM Eq. 63. It can be presented in function of the single G0G_{0} parameter as shown in Fig. 13. Strictly speaking, this is only possible for 1D nanosystems where the low-energy locator G0(ε)G_{0}(\varepsilon) is practically constant, defined by their topology and discrete width numbers. This dependence can be reasonably fitted by the formula:

c10.01G0+20G03.c_{1}\approx\sqrt{0.01G_{0}+20G_{0}^{3}}. (71)
Refer to caption
Figure 13: Upper critical concentration c1c_{1} for Cu impurities in: ZNT with n=50n=50 (brown), ANR with M=47M=47 (yellow), ANT with n=6n=6 (green), 2D graphene (blue), and ANT with n=12n=12 (red), together with the fitting curve by Eq. 71 in function of locator G0G_{0} value.

The IRM test also indicates a similar mobility window to open under the same impurities in 2D graphene with linear G0(ε)G_{0}(\varepsilon) behavior. The resulting c1c_{1} value qualitatively agrees with the approximation by Eq. 71 at the choice of G0=G0(εop)G_{0}=G_{0}(\varepsilon_{op}), εop\varepsilon_{op} being just the energy where the mobility window first opens (as included into Fig. LABEL:c1vsG).

Notably, the G0G_{0} parameter decreases with the nanotube width as 1/n\sim 1/n, producing respective decrease of c1c_{1} and so making the system spectrum more sensible to impurity resonances. Thus, the c1c_{1} value for ZNT with n>8n>8 should turn already below of that for 2D graphene (despite the latter could be formally thought as the nn\to\infty limit), underlying the importance of topological factors in these effects.

However, as it was already noted above, such widening of a nanotube would produce a similar narrowing of the Dirac window ΔDW\Delta_{DW} in its spectrum, delimiting the range of possible impurity effects. Therefore, the optimal conditions for them should be sought from a certain compromise between the parameters of impurity (energy level εres\varepsilon_{res}, hybridization γ\gamma, and concentration cc) and of host NT (topological type and width nn). Thus, for the considered Cu impurities, we estimate admissible width limits for ANT: n40n\lesssim 40, ZNT: n60n\lesssim 60, and ANR: M35M\lesssim 35. Their comparison with the c1c_{1} estimates in Fig. 13 suggests possibility for the narrow conductivity window above εres\varepsilon_{res} in ANT, graphene and maybe in ZNT, but hardly in ANR (though the latter can provide a similar window below εres\varepsilon_{res}).

VII Twisted nanotubes

Yet more general structure of a TNT is intermediate between the above considered ANT and ZNT, with its unit cell being defined by two natural numbers nn and mm, based on the chiral vector n,m=n𝕒1+m𝕒2{\mathbb{C}_{n,m}}=n{\mathbb{a}}_{1}+m{\mathbb{a}}_{2} and its orthogonal longitudinal vector 𝕋n,m=[(2m+n)𝕒1(2n+m)𝕒2]/Rn,m{\mathbb{T}_{n,m}}=[(2m+n){\mathbb{a}}_{1}-(2n+m){\mathbb{a}}_{2}]/R_{n,m} (where Rn,mR_{n,m} is the greatest common divisor of 2m+n2m+n and 2n+m2n+m). There are altogether Nn,m=4Cn,mTn,m/(3a2)N_{n,m}=4C_{n,m}T_{n,m}/(\sqrt{3}a^{2}) atomic positions in this cell, as shown for the example of n=4,m=1n=4,m=1 in Fig. 14a.

TNT structure differs qualitatively from the limiting ANT and ZNT ones in that it has a single period along n,m{\mathbb{C}}_{n,m} but repeated periods along the longitudinal 𝕋n,m{\mathbb{T}}_{n,m}, defining purely 1D translational symmetry. The resulting spectrum consists of Nn,mN_{n,m} purely 1D modes and it contains DLM’s under the condition of nm=3ln-m=3l with a natural ll Kane (which passes to ANT at l=0l=0 and ZNT at m=0m=0). Then multiple 1D Brillouin zones (BZ) in such a NT with their longitudinal period T~n,m=2π/Tn,m\tilde{T}_{n,m}=2\pi/T_{n,m} result just commensurable with the Dirac points in multiple 2D BZ of planar graphene. An example of TNT with n=4,m=1n=4,m=1 in Fig. 14b shows such matching of its 1D BZ’s to some of graphene Dirac points.

Refer to caption
Figure 14: a) The unit cell of n=4,m=1n=4,m=1 TNT (unfolded) with its chiral 4,1{\mathbb{C}}_{4,1} and longitudinal 𝕋4,1{\mathbb{T}}_{4,1} base vectors, containing N4,1=28N_{4,1}=28 atomic positions. b) The sequence of 14 1D Brilloin zones by this TNT (red line) along the base vector 𝕋~4,1=2π𝕋4,1/T4,12{\tilde{\mathbb{T}}_{4,1}}=2\pi{\mathbb{T}}_{4,1}/T^{2}_{4,1}, it matches to certain Dirac points from multiples of 2D graphene BZ (shadowed) with its base vectors 𝕓1,2{\mathbb{b}}_{1,2}, exactly at 2/32/3 or 1/31/3 of the T~4,1\tilde{T}_{4,1} periods (dotted segments).

A treatment of impurity effects on TNT can be done within the above restriction to only DLM’s with its results mostly defined by the related value of locator G0G_{0}. But here Eq. 50 should be modified by changing the 4n4n factor to (possibly much bigger) Nn,mN_{n,m} and also the Fermi velocity 3/2\sqrt{3}/2 in Eq. 61 to a much higher Tn,m3/2T_{n,m}\sqrt{3}/2, resulting in much lower G0G_{0} values. Then, accordingly to the results by Sec. VI, much lower critical impurity concentrations and much higher sensitivity of (properly chosen) TNT to impurity effects can be expected. A more detailed discussion of these issues will be given elsewhere.

VIII Beyond T-matrix approximation

Besides the most common approach to spectra of disordered systems through the single-impurity scattering in terms of T-matrix, there are its certain extensions. One of them uses the self-consistent approximation to this T-matrix Freed , another is based on group expansions of self-energy ILP1987 ; LP2015 in series of terms corresponding to wave scatterings by various clusters of increasing number of impurities.

VIII.1 Self-consistent approximation

Let us begin from the self-consistent approximation where the T-matrix is written as:

Tsc(ε)=γ2εεresγ2Gsc(ε),T_{s-c}(\varepsilon)=\frac{\gamma^{2}}{\varepsilon-\varepsilon_{res}-\gamma^{2}G_{s-c}(\varepsilon)}, (72)

with the self-consistent locator Gsc(ε)=G0[εcTsc(ε)]G_{s-c}(\varepsilon)=G_{0}[\varepsilon-cT_{s-c}(\varepsilon)].

Then, using the above approximated expression by Eq. 52, we obtain the self-consistency equation for Gsc(ε)G_{s-c}(\varepsilon):

i3nGsc(ε)+1\displaystyle i\sqrt{3}\,n\,G_{s-c}(\varepsilon)+1
+13[εcγ2εεresγ2Gsc(ε)]2=0.\displaystyle\qquad+\frac{1}{3}\left[\varepsilon-\frac{c\gamma^{2}}{\varepsilon-\varepsilon_{res}-\gamma^{2}G_{s-c}(\varepsilon)}\right]^{2}=0. (73)
Refer to caption
Figure 15: Imaginary parts of locator functions: self-consistent Gsc(ε)G_{s-c}(\varepsilon) (solid), simple T-matrix G(ε)G(\varepsilon) (dashed), and unperturbed G0(ε)G_{0}(\varepsilon) (dash-dotted) for the ANT system as in Figs. 8-11, mostly differing near the resonance level εres\varepsilon_{res}.
Refer to caption
Figure 16: Practical coincidence of self-consistent (solid lines) and simple (dashed lines) T-matrix functions for the same system as shown in Fig. 15.

Its numerical solution for the characteristic case of ANT with n=6n=6 and c=0.015c=0.015 provides the real and imaginary parts by Gsc(ε)G_{s-c}(\varepsilon) as shown in Fig. 15 in comparison with the same parts of the simple G0(ε)G_{0}(\varepsilon), Eq. 49. It demonstrates that the self-consistency correction only slightly changes G0(ε)G_{0}(\varepsilon) in a vicinity of εres\varepsilon_{res}, and also such parts of TscT_{s-c} and T0T_{0} are almost coincident (Fig. 16). So this change has practically no effect on the IRM results obtained above with use of the simple G0(ε)G_{0}(\varepsilon). So the corresponding mobility diagrams as in Fig. 12 remain also valid in the self-consistent approximation.

VIII.2 Group expansion

Next, we look for a group expansion (GE) of the self-energy matrix Σ^k(ε)\hat{\Sigma}_{k}(\varepsilon) in the form:

Σ^k(ε)=cT^(ε)[1^+cB^k(ε)+],\hat{\Sigma}_{k}(\varepsilon)=c\hat{T}(\varepsilon)\bigl{[}\hat{1}+c\hat{B}_{k}(\varepsilon)+\dots\bigr{]}, (74)

where the sum:

B^k(ε)=r[eikrA^r(ε)+A^r2(ε)][1^A^r2(ε)]1\hat{B}_{k}(\varepsilon)=\sum_{r}\bigl{[}{\rm e}^{-ikr}\hat{A}_{r}(\varepsilon)+\hat{A}_{r}^{2}(\varepsilon)\bigr{]}\bigl{[}\hat{1}-\hat{A}_{r}^{2}(\varepsilon)\bigr{]}^{-1} (75)

describes the effects of multiple scatterings between pairs of impurities at longitudinal distance rr between them through the related scattering matrix A^r(ε)=T^(ε)G^r(ε)\hat{A}_{r}(\varepsilon)=\hat{T}(\varepsilon)\hat{G}_{r}(\varepsilon) with the correlator matrix

G^r(ε)=14nNkkeikrG^0(k).\hat{G}_{r}(\varepsilon)=\frac{1}{4nN}\sum_{k^{\prime}\neq k}{\rm e}^{ik^{\prime}r}\hat{G}_{0}(k).

The omitted terms in the r.h.s. of Eq. 74 correspond to contributions by clusters of three and more impurities.

Notably, the important specifics of the disordered carbon NT’s (and NR’s), unlike the commonly studied disordered 3D or 2D crystals, consists in that:

\ast here the longitudinal distance rr between different impurities takes only discrete values, namely, 2r2r takes integer values (so the sum Σr\Sigma_{r} can be done without usual passing to integral 𝑑r\int dr) and

\ast this distance can be also zero.

Thus, it can be seen from Figs. 5, 7 that for any impurity position σ\sigma, there are 2n12n-1 other positions σ\sigma^{\prime} with the same longitudinal coordinate pσ=pσp_{\sigma}=p_{\sigma^{\prime}}. Such impurity pairs at zero longitudinal distance contribute into B^k\hat{B}_{k} with

B^0=c(11n)[A^0(ε)+A^02(ε)][1^A^02(ε)]1\hat{B}_{0}=c\left(1-\frac{1}{n}\right)\bigl{[}\hat{A}_{0}(\varepsilon)+\hat{A}_{0}^{2}(\varepsilon)\bigr{]}\bigl{[}\hat{1}-\hat{A}_{0}^{2}(\varepsilon)\bigr{]}^{-1} (76)

and this contribution results dominant over the resting sum r0\sum_{r\neq 0} in Eq. 75 (see in Appendix).

Consider it in more detail for the example of ANT where all the matrices in the self-energy Σ^k\hat{\Sigma}_{k} can be substituted by scalars: A0(ε)=T(ε)G0(ε)A_{0}(\varepsilon)=T(\varepsilon)G_{0}(\varepsilon), and T(ε)T(\varepsilon) can be taken in the form by Eq. 49. Then the B0(ε)B_{0}(\varepsilon) contribution to GE by Eq. 74 is estimated using the explicit form of A(ε)=Γ/(eεresiΓ)A(\varepsilon)=\Gamma/(e-\varepsilon_{res}-i\Gamma) with Γ=γ2/(2n3)\Gamma=\gamma^{2}/(2n\sqrt{3}) to give:

B0(ε)=(112n)ΓεεresiΓ(eεres)2.B_{0}(\varepsilon)=(1-\frac{1}{2n})\Gamma\frac{\varepsilon-\varepsilon_{res}-i\Gamma}{(e-\varepsilon_{res})^{2}}. (77)

For comparison, the lowest degree resting term in Bk(ε)B_{k}(\varepsilon) is evaluated with use of the approximation for Ar(ε)A_{r}(\varepsilon) by Eq. 91, as:

r0eikrAr(ε)iΓε4nπ2Li2(eik/2),\sum_{r\neq 0}{\rm e}^{-ikr}A_{r}(\varepsilon)\approx\frac{i\Gamma\varepsilon}{4n\pi^{2}}\,{\rm Li}_{2}\left(-{\rm e}^{-ik/2}\right), (78)

where the polylogarithmic function AbS at k1k\ll 1 is close to Li2(1)=π2/12{\rm Li}_{2}(-1)=-\pi^{2}/12. Thus the magnitude of Eq. 78 term turns more than 4 orders below of that by Eq. 77 within the whole low-energy range, while the next terms in Bk(ε)B_{k}(\varepsilon) result yet much smaller.

Then, taking the GE convergence criterion as c|B0(ε)|<1c|B_{0}(\varepsilon)|<1, the T-matrix validity condition results from Eq. 77 well approximated by:

|εεres|Γc,|\varepsilon-\varepsilon_{res}|\gtrsim\Gamma\sqrt{c}, (79)

and it can only fail in a very narrow vicinity of εres\varepsilon_{res} (the blue range in Fig. 12 for ZNT) deeply within the localized range, just confirming localization of states there. In a similar way, this conclusion can be reached for other nanosystems considered here, justifying the above obtained pictures of spectrum restructuring in them.

IX Discussion of results

The above obtained results on restructured low-energy quasiparticle spectra in carbon nanosystems can be discussed in the context of disordered 1D crystalline systems generally known not to contain conducting states at any degree of disorder Anderson1958 ; Hjort ; Delande ; Vosk ; YaqiTao . But their presence in the disordered NT’s and NR’s indicates again the principal qualitative difference of these structures from the strictly 1D chains. Besides the above noted possibility for zero longitudinal distance between different impurity positions, it can be yet illustrated by the behaviors of correlator functions with growing inter-impurity distance rr: converging as 1/r2\sim 1/r^{2} by Eq. 91 for NT’s and diverging as 1/r\sim 1/r for really 1D chains (as that by single gr(ε)g_{r}(\varepsilon) by Eq. 89), making the related GE divergent at all energies. So we can conclude that it is just the presence of additional transversal degrees of freedom in quasi-1D systems that enables their conductivity under disorder Ando1998 ; Ando2000 ; Biel2008 .

The found intermittence of conducting and localized energy ranges in the considered nanosystems can be then used for their various practical applications. Thus, the most straightforward effects are expected in frequency ω\omega- and temperature TT-dependent electric conductivity, following from the general Kubo-Greenwood formula Kubo , Greenwood presented here in the form:

σ(ω,T)=e2π𝑑εf(ε,T)f(ε,T)ω\displaystyle\sigma(\omega,T)=\frac{e^{2}}{\pi}\int d\varepsilon\,\frac{f(\varepsilon,T)-f(\varepsilon^{\prime},T)}{\omega}
×conddkvk(ε)vk(ε)ImGk(ε)ImGk(ε).\displaystyle\times\int_{cond}dk\,v_{k}(\varepsilon)v_{k}(\varepsilon^{\prime}){\rm Im}G_{k}(\varepsilon)\,{\rm Im}G_{k}(\varepsilon^{\prime}). (80)

It includes the Fermi function f(ε,T)=[e(εεF)/T+1]1f(\varepsilon,T)=[{\rm e}^{(\varepsilon-\varepsilon_{F})/T}+1]^{-1}, the group velocity vk(ε)=[kε/ε]1v_{k}(\varepsilon)=[\partial k_{\varepsilon}/\partial\varepsilon]^{-1}, the a.c. shifted energy ε=ε+ω\varepsilon^{\prime}=\varepsilon+\hbar\omega, and the integration cond\int_{cond} avoids localized ranges (as those shadowed in Fig. 11).

First of all, consider the simplest d.c. limit:

limω0f(ε,T)f(ε,T)ω14TCosh2[(εεF)/2T],\lim_{\omega\to 0}\frac{f(\varepsilon,T)-f(\varepsilon^{\prime},T)}{\omega}\to\frac{1}{4T{\rm Cosh}^{2}[(\varepsilon-\varepsilon_{F})/2T]},

which then goes to δ(εεF)\delta(\varepsilon-\varepsilon_{F}) at T0T\to 0, defining

σ(0,0)=e2πcond𝑑kvk2(εF)[ImGk(εF)]2,\sigma(0,0)=\frac{e^{2}}{\pi}\int_{cond}dk\,v_{k}^{2}(\varepsilon_{F})[{\rm Im}G_{k}(\varepsilon_{F})]^{2},

and this turns zero for εF\varepsilon_{\rm F} laying within a localized range. But such insulating state can be converted to conducting by applying quite a small external gate voltage VgV_{g}. Thus, for the ANT case of Fig. 11, the initial εFεres=0.03\varepsilon_{\rm F}\approx\varepsilon_{res}=0.03 (in units of t2.8t\approx 2.8 eV) could reach the nearest mobility edges with gating either 100\approx 100 meV upwards or 80\approx 80 meV downwards, and the resulting reversible insulator-metal transitions should stay well resolved up to room temperatures.

Otherwise, a quite sharp threshold in optical conductivity can be reached by applying IR radiation of 10\sim 10 THz (which may be also combined with a slight gate tuning Vg5V_{g}\sim 5 meV). A more detailed description of the σ(ω,T)\sigma(\omega,T) behavior readily follows from the above given T-matrix solutions for vk(ε)v_{k}(\varepsilon) and ImGk(ε){\rm Im}G_{k}(\varepsilon). All these effects are most diversified with formation of multiple mobility edges (above the second critical concentration c1c_{1}).

The above quantitative results were delimited to a single choice of Cu impurity in its top-position over a host carbon atom, but they can be readily extended to other impurities in different positions, providing a variety of possible values for the relevant εres\varepsilon_{res} and γ\gamma parameters and so a much broader field of resulting electronic dynamics. Nevertheless, their qualitative features indicated in the present study should stay proper for all of them.

Yet another practical condition for validity of the above conclusions consists in that a NT (or a NR) should be long enough compared to the localization length llocl_{loc} of quasiparticle states near the mobility edges. The latter can be estimated as llocvkjτ(εj)l_{loc}\sim v_{k_{j}}\tau(\varepsilon_{j}) using Eqs. 48, 49, 62 for jjth mobility edge which results in lloc1/Γl_{loc}\sim 1/\Gamma. Thus for the same instance of ANT with n=12n=12 we obtain numerically lloc400l_{loc}\sim 400 nm, therefore such a NT should extend to more than 5μ\sim 5\,\mum in length.

At least, it should be especially noted that, in accordance with the reasoning in Sec. VII, the highest sensibility of NT structures to impurity perturbations and the richest variety of resulting intermittent conductive and localized spectrum ranges in them is expected in the properly designed TNT’s at a proper choice of impurity centers and their concentrations.

X Acknowledgements

The authors are thankful to L.S. Brizhik, A.A. Eremko, and S.G. Sharapov for their attention to this work and its valuable discussion. V.L. acknowledges the partial support of his work by the Simons Foundation.

Appendix A Locator and correlator

We calculate the integral that contributes to the locator GF in a 1D nanosystem, for an example of εk\varepsilon_{k} mode in ANT:

g(ε)=14π2π2πdkε1+2cosk2,g(\varepsilon)=\frac{1}{4\pi}\int_{-2\pi}^{2\pi}\frac{dk}{\varepsilon-1+2\cos\tfrac{k}{2}}, (81)

valid at 3<ε<1-3<\varepsilon<1. By the common change of variable, t=tank4t=\tan\tfrac{k}{4}, this integral is rewritten as:

g(ε)=1πdt1+ε(3ε)t2,g(\varepsilon)=\frac{1}{\pi}\int_{-\infty}^{\infty}\frac{dt}{1+\varepsilon-(3-\varepsilon)t^{2}}, (82)

giving the explicit result:

g(ε)=iθ(1+ε)θ(3ε)(3ε)(1+ε)g(\varepsilon)=i\frac{\theta(1+\varepsilon)\theta(3-\varepsilon)}{\sqrt{(3-\varepsilon)(1+\varepsilon)}} (83)

with the standard θ\theta-functions delimiting the εk\varepsilon_{k} energy range.

Another contribution to G0(ε)G_{0}(\varepsilon) from εk-\varepsilon_{k} mode, valid at 1<ε<3-1<\varepsilon<3, is

g(ε)=iθ(1ε)θ(3+ε)(3+ε)(1ε)g(-\varepsilon)=i\frac{\theta(1-\varepsilon)\theta(3+\varepsilon)}{\sqrt{(3+\varepsilon)(1-\varepsilon)}} (84)

which then enters the full expression for locator GF:

G0(ε)=g(ε)g(ε)4n.G_{0}(\varepsilon)=\frac{g(\varepsilon)-g(-\varepsilon)}{4n}. (85)

The next step is to calculate, for the same ANT, the correlator between a pair of impurities at distance rr:

Gr(ε)=gr(ε)gr(ε)4n,G_{r}(\varepsilon)=\frac{g_{r}(\varepsilon)-g_{r}(-\varepsilon)}{4n}, (86)

through the integral:

gr(ε)=14π2π2πfr(k,ε)𝑑k,g_{r}(\varepsilon)=\frac{1}{4\pi}\int_{-2\pi}^{2\pi}f_{r}(k,\varepsilon)dk, (87)
Refer to caption
Figure 17: Integration contour for Eq. 88.

with its integrand:

fr(k,ε)=eikrε1+2cosk2,f_{r}(k,\varepsilon)=\frac{{\rm e}^{ikr}}{\varepsilon-1+2\cos\tfrac{k}{2}},

especially considering long distances, r1r\gg 1. It can be done passing to the contour integral:

Cfr(k,ε)dk=gr(ε)+0[fr(2π+iy,ε)\displaystyle\int_{C}f_{r}(k,\varepsilon)dk=g_{r}(\varepsilon)+\int_{0}^{\infty}\left[f_{r}(2\pi+iy,\varepsilon)\right.
fr(2π+iy,ε)]dy=0.\displaystyle\qquad\qquad\qquad\left.-f_{r}(-2\pi+iy,\varepsilon)\right]dy=0. (88)

where the contour CC in the complex momentum plane (Fig. 17) includes the fr(k,ε)f_{r}(k,\varepsilon) poles:

±kε=±2arccos1ε2.\pm k_{\varepsilon}=\pm 2\arccos\frac{1-\varepsilon}{2}.

For integration along the imaginary axis we use the relations cos(±π+iy/2)=cosh(y/2)\cos(\pm\pi+iy/2)=-\cosh(y/2) and ei(±2π+iy)r=(1)2reyr{\rm e}^{i(\pm 2\pi+iy)r}=(-1)^{2r}{\rm e}^{-yr} (noting that the longitudinal distance rr between impurities takes here only integer or half-integer values) and the explicit formula:

I2r(b)=0e2rydycoshy+b=12r+1[(bb21+1)\displaystyle I_{2r}(b)=\int_{0}^{\infty}\frac{{\rm e}^{-2ry}\,dy}{\cosh y+b}=\frac{1}{2r+1}\left[\left(\frac{b}{\sqrt{b^{2}-1}}+1\right)\right.
×F12(1,2r+1;2r+2;1b21b)+(bb211)\displaystyle\times{{}_{2}F_{1}}\left(1,2r+1;2r+2;\frac{1}{\sqrt{b^{2}-1}-b}\right)+\left(\frac{b}{\sqrt{b^{2}-1}}-1\right)
×F12(1,2r+1;2r+2;1b21+b)]\displaystyle\times\left.{{}_{2}F_{1}}\left(1,2r+1;2r+2;-\frac{1}{\sqrt{b^{2}-1}+b}\right)\right] (89)

where F12(n,m;p;q){{}_{2}F_{1}}(n,m;p;q) is the hypergeometric function Andrews .

Refer to caption
Figure 18: Exact discrete values of the correlator Gr(ε)G_{r}(\varepsilon) by Eq. 90 (solid points) and their approximation by Eq. 91 (dashed curves) for the choice of ε=εres\varepsilon=\varepsilon_{res} and n=12n=12.

Then the sought correlator follows from Eqs. 86, 87, 89 analytically as:

Gr(ε)=(1)2r16πn[I2r1(bε)I2r+1(bε)\displaystyle G_{r}(\varepsilon)=\frac{(-1)^{2r}}{16\pi n}\left[I_{2r-1}\left(b_{\varepsilon}\right)-I_{2r+1}\left(b_{\varepsilon}\right)\right.
I2r1(bε)+I2r+1(bε)]\displaystyle\qquad\qquad\quad\left.-\,I_{2r-1}\left(b_{-\varepsilon}\right)+I_{2r+1}\left(b_{-\varepsilon}\right)\right] (90)

with the energy dependent parameter

bε=1ε2.b_{\varepsilon}=\frac{1-\varepsilon}{2}.

Notably, the full form by Eq. 90 admits a very simple approximation:

Gr(ε)i(1)2rε4n(2πr)2,G_{r}(\varepsilon)\approx i\frac{(-1)^{2r}\varepsilon}{4n(2\pi r)^{2}}, (91)

however quite precise at all non-zero inter-impurity distances (see Fig. 18) and suitable for detailed evaluations as in analysis of particular GE terms (Sec. VIIIB).

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