Supplementary information for
“Enhancement of superconductivity on the verge of a structural instability in isovalently doped -ThRh1-xIrxGe”
Guorui Xiao1,2,3111[email protected]Qinqing Zhu1,2,4Yanwei Cui1,2,3Wuzhang Yang1,2,4Baizhuo Li3Shijie Song3Guang-Han Cao3Zhi Ren1,2222[email protected]1School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, PR China
2Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, PR China
3Department of Physics, Zhejiang University, Hangzhou 310027, P. R. China
4Department of Physics, Fudan University, Shanghai, 200433, PR China
.1 S1. Upper critical field analysis of selected samples with = 0.2, 0.5, and 0.6
Figure S1:
(a-c) Temperature dependence of the upper critical field of selected samples with = 0.2, 0.5, and 0.6, respectively.
The dashed and solid lines are fits to the data by WHH and GL models, respectively.
.2 S2. Power-law analysis of the () data at ambient pressure for -ThRh1-xIrxGe
Figure S2:
(a) Low temperature resistivity for the -ThRh1-xIrxGe samples with = 0.1, 0.3, 0.5, and 0.7.
The solid lines are fits to the data by the power law = 0 + , where 0 is the residual resistivity, is the prefactor and is the temperature exponent.
(b) Ir content dependence of the temperature exponent . The inset shows the () data of = 0.5 plotted as a function of . The solid line is a guide to the eyes.
.3 S3. Power-law analysis of the high-pressure () data for = 0.2 and 0.5
Figure S3:
(a) Low temperature resistivity at selected pressures of 0.5, 1.5 and 2.8 GPa for the -ThRh1-xIrxGe sample with = 0.2. The solid lines are fits to the data by the power law.
(c-d) Same set of data for = 0.5.
