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Superconductivity of Light-Elements Doped H3S

Hongyi Guan    Ying Sun International Center for Computational Method &\& Software and State Key Laboratory of Superhard materials, College of Physics, Jilin University, Changchun 130012, China    Hanyu Liu [email protected] International Center for Computational Method &\& Software and State Key Laboratory of Superhard materials, College of Physics, Jilin University, Changchun 130012, China Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China International Center of Future Science, Jilin University, Changchun 130012, China
Abstract

Pressurized hydrogen-rich compounds, which could be viewed as precompressed metallic hydrogen, exhibit high superconductivity, thereby providing a viable route toward the discovery of high-temperature superconductors. Of particular interest is to search for high-temperature superconductors with low stable pressure in terms of pressure-stabilized hydrides. In this work, with the aim of obtaining high-temperature superconducting compounds at low pressure, we attempt to study the doping effects for high-temperature superconductive H3S\mathrm{H_{3}S} with supercells up to 64 atoms using first principle electronic structure simulations. As a result of various doping, we found that Na doping for H3S\mathrm{H_{3}S} could lower the dynamically stable pressure by 40 GPa. The results also indicate P doping could enhance the superconductivity of H3S\mathrm{H_{3}S} system, which is in agreement with previous calculations. Moreover, our work proposed an approach that could reasonably estimate the superconducting critical temperature (TcT_{c}) of a compound containing a large number of atoms, saving the computational cost significantly for large-scale elements-doping superconductivity simulations.

preprint: APS/123-QED

I INTRODUCTION

The search for the high-temperature superconducting hydrides at high pressures has attracted attention in condensed matter physics field. In this regard, many hydrides with relatively high TcT_{c} were identified under high pressure [1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15]. Among these high-temperature superconducting hydrides, the theoretically predicted H3S\mathrm{H_{3}S} with TcT_{c} of 203 K [1, 2, 3] and LaH10\mathrm{LaH_{10}} with TcT_{c} of 250-260 K in [5, 6, 8, 7], as well as CaH6 being the first example of clathrate hydrides ever predicted [16, 17, 18], were experimentally synthesized. Recently, the carbonaceous sulfur hydride was found to possess extremely high superconductivity with a TcT_{c} as high as 288 K at 267 GPa [12], however, the actual crystal structure and the mechanisms of such extremely high superconductivity remains unclear and missing [19, 20, 21, 22, 23].

Structure searches below 200 GPa were performed for the C-S-H system [21, 19, 20, 24, 25], while no high superconductive structure is yet identified. Later, it was reported that the high superconductivity in the C-S-H compound could be explained by the doping of C into the Im3¯mIm\bar{3}m H3S\mathrm{H_{3}S} [26, 21], whereas these simulations are based on the virtual crystal approximation (VCA) [27]. This approximation is employed with linearly mixed pseudopotentials and couldnot take the details of symmetry breaking and local distortions into account. These issues, in principle, could be addressed by performing the electronic simulations of doping carbon into a sufficiently large supercell of H3S\mathrm{H_{3}S}, if the computational power is allowed.

In this paper, we investigated the structures and physical properties of partially substituting sulfur by the light elements in Im3¯mIm\bar{3}m H3S\mathrm{H_{3}S} with supercell approach at the pressure range of 150-250 GPa by first-principle calculations. Our calculations mainly focus on H24S7X\mathrm{H_{24}S_{7}X} and H48S15X\mathrm{H_{48}S_{15}X}, where X\mathrm{X} denotes the doping elements from H to Cl without He and Ne in the periodic table. As a result, we found that the Na doing could lower the dynamically stable pressure of 40 GPa compared to the parent H3S\mathrm{H_{3}S} system. Furthermore, the P doping could enhance the superconductivity of the parent H3S\mathrm{H_{3}S} system, which is ascribed to octahedra units [SH6] and [PH6]. In addition, we proposed an estimation approach to investigate the low proportion C-doping effects at 260 GPa. The results suggest the estimated TcT_{c} is much lower than the room temperature.

II COMPUTATIONAL DETAILS

The structural optimization was done by the Vienna Ab initio Simulation Package (VASP) [28], with pseudopotentials employing generalized gradient approximation (GGA) based Perdew-Burke-Ernzerhof (PBE) type exchange correlation functional [29] and projector-augmented wave method [30]. Monkhorst 𝒌\bm{k} meshes [31] spacing 2π×0.12\pi\times 0.1 Å-1 was used to sample the first Brillouin Zones. The electronic density of states was also computed by VASP with 20×20×2020\times 20\times 20 𝒌\bm{k} mesh and was analyzed by VASPKIT [32]. The phonon properties and superconducting properties were computed by the Quantum-Espresso (QE) package, with vanderbilt ultra-soft pseudopotentials [33]. We have adopted 𝒌\bm{k} mesh of 16×16×1616\times 16\times 16 and 𝒒\bm{q} mesh of 4×4×44\times 4\times 4 and tested the convergence with 𝒌\bm{k} mesh of 20×20×2020\times 20\times 20 and 𝒒\bm{q} mesh of 5×5×55\times 5\times 5 for H24S7X\mathrm{H_{24}S_{7}X}. For H48S15X\mathrm{H_{48}S_{15}X}, 𝒌\bm{k} mesh was used as 12×12×1212\times 12\times 12 and 𝒒\bm{q} mesh was used as 3×3×33\times 3\times 3. The smearing method was Methfessel-Paxton first-order spreading [34] of 0.03 Ry. The cutoff energy for basis of plane waves was employed to be 100 Ry. Then, the transition temperatures were estimated by McMillan-Allen-Dynes (MAD) formula [35]

Tc=f1f2ωlog1.20exp[1.04(1+λ)λμ(1+0.62λ)]T_{c}=f_{1}f_{2}\dfrac{\omega_{\mathrm{log}}}{1.20}\mathrm{exp}\left[-\dfrac{1.04(1+\lambda)}{\lambda-\mu^{*}(1+0.62\lambda)}\right] (1)

where

f1\displaystyle f_{1} ={1+[λ2.46(1+3.8μ)]3/2}1/3\displaystyle=\left\{1+\left[\dfrac{\lambda}{2.46(1+3.8\mu^{*})}\right]^{3/2}\right\}^{1/3} (2)
f2\displaystyle f_{2} =1+λ2(ω2/ωlog1)λ2+[1.82(1+6.3μ)(ω2/ωlog)]2\displaystyle=1+\dfrac{\lambda^{2}(\omega_{2}/\omega_{\text{log}}-1)}{\lambda^{2}+[1.82(1+6.3\mu^{*})(\omega_{2}/\omega_{\text{log}})]^{2}}

are the correction factors. μ\mu^{*}, λ\lambda and ωlog\omega_{\text{log}} indicate the screened Coulomb parameter, electron-phonon coupling constant and the logarithm average over phonon frequency, respectively.

We have also computed the results by Migdal-Eliashberg (ME) theory [36, 37, 38, 39]

Z(iωj)=1+πTωjjωjωj2+Δ2(iωj)λ(iωjiωj)\displaystyle Z(i\omega_{j})=1+\dfrac{\pi T}{\omega_{j}}\sum\limits_{j^{\prime}}\dfrac{\omega_{j^{\prime}}}{\sqrt{\omega_{j^{\prime}}^{2}+\Delta^{2}(i\omega_{j^{\prime}})}}\lambda(i\omega_{j}-i\omega_{j^{\prime}}) (3)
Z(iωj)Δ(iωj)=πTjΔ(iωj)ωj2+Δ2(iωj)×[λ(iωjiωj)μ]\displaystyle\begin{aligned} Z(i\omega_{j})\Delta(i\omega_{j})&=\pi T\sum\limits_{j^{\prime}}\dfrac{\Delta(i\omega_{j^{\prime}})}{\sqrt{\omega_{j^{\prime}}^{2}+\Delta^{2}(i\omega_{j^{\prime}})}}\\ &\times[\lambda(i\omega_{j}-i\omega_{j^{\prime}})-\mu^{*}]\end{aligned} (4)
λ(iωjiωj)=dω2ωα2F(ω)ω2+(ωjωj)2\displaystyle\lambda(i\omega_{j}-i\omega_{j^{\prime}})=\int\mathrm{d}\omega\dfrac{2\omega\alpha^{2}F(\omega)}{\omega^{2}+(\omega_{j}-\omega_{j^{\prime}})^{2}} (5)

to compare with that of MAD equation, which is realized by the Elk code [40]. TcT_{c} could be obtained once the superconducting gap Δ(iωj)\Delta(i\omega_{j}) becomes zero in numerically solving ME equation.

Refer to caption
Figure 1: Summary of dynamical stability and stable pressure ranges of H24S7X\mathrm{H_{24}S_{7}X}, where X is the dopant.

III RESULTS AND DISCUSSIONS

We began our simulations on investigating the validity of the supercell approach by computing the electronic properties and phonon properties of primitive cell and a supercell of 32 atoms (H24S8\mathrm{H_{24}S_{8}}) for H3S\mathrm{H_{3}S} at 200 GPa, as shown in Fig. S1 [41]. As shown in Fig. S2 [41], the superconductivity using the supercell is well consistent with that simulated from primitive cell of H3S\mathrm{H_{3}S}, which is also in agreement with previous results [2, 3]. The relevant information is listed in Table S1 [41].

Refer to caption
Figure 2: Phonon dispersion and phonon linewidth for H24S7Na\mathrm{H_{24}S_{7}Na} at pressure (a) 150 GPa, (b) 200 GPa and (c) 250 GPa, the magnitude of the phonon linewidth is indicated by the radii of blue circles. (d) Phonon density of states for H24S7Na\mathrm{H_{24}S_{7}Na} at 150-250 GPa.
Refer to caption
Figure 3: (a) Electronic band structure (left panel) and projected density of states (right panel) of H48S15P\mathrm{H_{48}S_{15}P} at 200 GPa. (b) Phonon dispersion with phonon linewidth (left panel) and phonon density of states (right panel) of H48S15P\mathrm{H_{48}S_{15}P} at 200 GPa. The radii of the blue circles indicate the magnitude of the phonon linewidth. (c) Atom projected and orbital projected band structures (left panel) and density of states (right panel) of H48S15P\mathrm{H_{48}S_{15}P} at 200 GPa near the Fermi surface. The width of the lines indicates the weights of the corresponding orbitals. Due to the low proportion of P atoms, their weights are displayed fivefold. (d) Crystal structure of H48S15P\mathrm{H_{48}S_{15}P} at 200 GPa. The structures of [PH6\mathrm{PH_{6}}] and [SH6\mathrm{SH_{6}}] units are represented by the purple and yellow octahedra units respectively.

Furthermore, we have systematically investigated the doping of H3S\mathrm{H_{3}S} by the elements from H to Cl without He and Ne in the periodic table using supercells of 32 and 64 atoms. The structures of H24S7X\mathrm{H_{24}S_{7}X} and H48S15X\mathrm{H_{48}S_{15}X} are provided in Fig. S3 [41]. The results indicate the doping could destabilize the structure for several compounds. For the H24S7X\mathrm{H_{24}S_{7}X} compounds, for example, imaginary frequency was found for Γ\Gamma point with X=H, indicating dynamical instability. The dynamical stability of H24S7X\mathrm{H_{24}S_{7}X} compounds within the range of 150-250 GPa is summarized in Fig. 1. Moreover, we found that 12.5% doping of Na into H3S\mathrm{H_{3}S} has a lower dynamical stable pressure (140 GPa) compared to 180 GPa of the parent H3S\mathrm{H_{3}S} [2]. The absence of imaginary phonon frequency in the simulated phonon dispersion implies the dynamical stability of H24S7Na\mathrm{H_{24}S_{7}Na}, as shown in Fig. 2. It is clearly seen that the strongest electron-phonon interaction mainly emerges around PP point, which may lead to a large λ\lambda of 2.31. As a result, TcT_{c} of H24S7Na\mathrm{H_{24}S_{7}Na} can reach 191 K at 150 GPa by using ME equation with μ=0.10\mu^{*}=0.10.

Refer to caption
Figure 4: Calculated xx dependence of TcT_{c} for H3S1-xCx at 260 GPa. The points in the gray region are estimated by Eqs. (6), (7).
Table 1: The parameters of the superconductivity for the doped H3S\mathrm{H_{3}S} at a pressure range of 150-250 GPa, where the typical screened Coulomb parameter μ\mu^{*} of 0.1-0.13 is employed.
Dopant Doping ratio Pressure (GPa) λ\lambda ωlog\omega_{\mathrm{log}} (K) N(0)N(0) (States/Ry/atom) TcT_{c} by MAD equation (K) TcT_{c} by ME equation (K)
B 0.1250 200 1.56 1281 0.721 154-171 176-191
B 0.1250 250 1.21 1447 0.692 126-143 140-156
C 0.1250 250 1.40 1259 0.709 134-150 153-169
F 0.1250 250 1.04 1428 0.605 97-113 105-120
Na 0.1250 150 2.31 846 0.656 154-169 178-191
Na 0.1250 200 1.56 1094 0.660 133-148 149-167
Na 0.1250 250 1.42 1152 0.667 125-140 138-152
Si 0.1250 200 1.99 1155 0.838 182-199 210-225
Si 0.1250 250 1.59 1294 0.849 161-179 188-205
P 0.1250 200 2.02 1238 0.841 197-215 222-238
P 0.1250 250 1.53 1520 0.922 180-199 207-224
P 0.0625 200 2.29 1193 0.933 212-231 246-262
P 0.0625 250 1.66 1512 0.955 196-216 227-244
Cl 0.1250 200 1.31 1424 0.706 137-154 153-168
Cl 0.1250 250 1.08 1591 0.700 115-133 129-145
S - 200 1.85 1358 0.868 195-214 222-238
S - 250 1.46 1571 0.875 175-195 197-219

As shown in previous studies [42, 43], the P doped H3S\mathrm{H_{3}S} has the high superconductivity due to the enhanced density of states at the Fermi level of parent H3S\mathrm{H_{3}S}. We have also performed the simulations for elucidating the physical mechanism of this compound by using a supercell of 64 atoms (H48S15P\mathrm{H_{48}S_{15}P}). As is shown in Fig. 3(a) and Fig. S4, there are several flat bands along the 𝒌\bm{k} path FQZF\to Q\to Z at the Fermi surface, with the derivative En/k\partial E_{n}/\partial k almost zero. This indicates that the doping of P alters the two van Hove singularities [44, 42] and can result in a peak of density of states right at the Fermi surface. Moreover, we found that the symmetry is preserved well after doping due to the existence of the near degeneracies in electronic band structures as shown in Fig. 3(a), which can also be a critical factor to induce Van Hove singularities [23]. The high electronic density of states at the Fermi level could contribute to the large magnitude of phonon linewidth, as shown in Fig. 3(b) and contrasted with Fig. S5 [41]. We have also found the hybridization of ss orbitals of H with pp orbitals of S and P near the Fermi surface (Fig. 3(c)). The negligible curvature of the flat bands indicates well localization of corresponding ss and pp electrons, revealing the strong P-H and S-H chemical bondings. Fig. 3(d) shows the existence of [PH6\mathrm{PH_{6}}] and [SH6\mathrm{SH_{6}}] units, where the distances between P-H and S-H are compressed to 1.470 Å and 1.474 Å, compared with 1.493 Å in H3S\mathrm{H_{3}S} and 1.494 Å-1.511 Å for other S-H bonds in H48S15P\mathrm{H_{48}S_{15}P}. Finally, we found that the 6.25% P doping could enhance the TcT_{c} of H3S\mathrm{H_{3}S} around 20-30 K at 200 GPa and 250 GPa.

To explore the superconductivity of the C-doped H3S\mathrm{H_{3}S}, we have computed the electron-phonon coupling strength of H32S7C\mathrm{H_{32}S_{7}C}, H36S11C\mathrm{H_{36}S_{11}C} and H48S15C\mathrm{H_{48}S_{15}C}. For larger supercells corresponding to lower-proportion C-doped H3S\mathrm{H_{3}S}, the simulations could not be afforded due to computational demanding of these simulations as well as the limition of our computational power. Therefore, we attempt to estimate the superconductivity of low-proportion C-doped H3S\mathrm{H_{3}S} without performing actual electron-phonon coupling simulations for a large supercell. Given that similar structures of the low-proportion C-doped H3S\mathrm{H_{3}S} shares similar magnitude of average mass and electron-phonon interaction at the same pressure, we could thus estimate λ\lambda of the MgB2\mathrm{MgB_{2}} type superconductors by the Hopfield expression [45, 46]

λ=N(0)I2Mω2\lambda=\dfrac{N(0)I^{2}}{M\omega^{2}} (6)

Then, the TcT_{c} can be estimated by [46]

Tc=ωexp(1λ1+λμ)T_{c}=\omega\exp\left(-\dfrac{1}{\frac{\lambda}{1+\lambda}-\mu^{*}}\right) (7)

Further details of our estimation approach is also provided in the supplemental material [41]. As is shown in Table S2, values of TcT_{c} computed from our approach vary only about 5% at maximum compared with that directly computed by QE, indicating the validity of our computational scheme. We thus investigated the superconductivity of the doping system of H3S up to 256 atoms as shown in Table S3 and Fig. 4. The TcT_{c} of H3S1-xCx with xx=0.1250-0.0156 could reach 148-192 K with μ\mu^{*}=0.10 at 260 GPa. This suggests that the estimated superconductivity of C-doped H3S\mathrm{H_{3}S} is much lower than room temperature as predicted in previous studies [23, 22]. The reason for this discrepancy is possibly because different approches were employed. As for other predicted compounds, the superconductivity-related information is included in Table 1.

IV CONCLUSION

In summary, we have computed the superconductivity of light-elements doped H3S\mathrm{H_{3}S} using supercell approach within the framework of first-principle electronic structure. Our simulations indicate that the doping of Na can lower the dynamically stable pressure of H3S\mathrm{H_{3}S} while the doping of P can increase the density of states at the Fermi level as well as the superconductivity of H3S\mathrm{H_{3}S}. Remarkably, we found that the existence of octahedra [PH6\mathrm{PH_{6}}] and [SH6\mathrm{SH_{6}}] units with squeezed P-H and S-H bonds in H48S15P\mathrm{H_{48}S_{15}P} which are likely to be related to the high density of states at the Fermi level, with the higher TcT_{c} of 20-30 K compared with H3S\mathrm{H_{3}S}. Furthermore, we have proposed an estimation approach to reasonably estimate the superconductivity of the low proportion C-doping H3S\mathrm{H_{3}S} without performing electron-phonon calculations on a quite large supercell. Our current work may inspire future work toward searching for high-temperature superconductivity in light-elements doping systems.

ACKNOWLEDGMENTS

This work was supported by the Major Program of the National Natural Science Foundation of China (Grant No. 52090024), National Natural Science Foundation of China (Grant No. 12074138, 11874175, and 11874176), Fundamental Research Funds for the Central Universities (Jilin University, JLU), Program for JLU Science and Technology Innovative Research Team (JLUSTIRT), and The Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000). This work used computing facilities at the High-Performance Computing Centre of Jilin University.

References