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Magnetic, transport and topological properties of Co-based shandite thin films

Kazuki Nakazawa1,2, Yasuyuki Kato1 and Yukitoshi Motome1 1Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
2RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Abstract

The kagome ferromagnet, Co-based shandite Co3Sn2S2, shows a large anomalous Hall effect (AHE) associated with the Weyl nodes. A thin film with a Co kagome monolayer was predicted to exhibit the quantum AHE, which awaits the experimental realisation. However, it is challenging to precisely predict how the Weyl nodes reside in thin films where the lattice and electronic structures are in general different from the bulk. Here we report comprehensive ab initio results for thin films of Co3Sn2S2 with one, two and three Co layers with Sn or S surface terminations. We find that all the Sn-end films stabilise a ferromagnetic state similar to the bulk, and retain the large AHE down to the monolayer limit where the AHE is quantised, while the magnetic and topological properties drastically change with the number of Co layers in the S-end films. Our results would stimulate further experimental exploration of thin Weyl materials.

Introduction

After the prediction of the Berezinskii-Kosterlitz-Thouless transition and Haldane’s seminal work for a spontaneous quantum anomalous Hall effect (AHE) in two spatial dimensions, it has been widely recognised that condensed matters can be characterised using the concept of topology Nobel . The Weyl semimetals are a representative in three dimensions that have attracted much attention because of the variety of interesting physical properties arising from their unique topology AMV . The energy spectrum of the Weyl semimetals possesses Weyl nodes, which can be regarded as “monopoles” with chirality +1+1 or 1-1 in momentum space. The Weyl nodes always appear in pairs with positive and negative chirality NN , and this feature generates the Fermi arc on the surface through the bulk-edge correspondence Murakami , as indeed observed by the angle-resolved photoemission spectroscopy Xu ; Souma . The peculiar topology of the Weyl semimetals is also detected in quantum transport phenomena, such as the large AHE Murakami ; Burkov ; Suzuki , the anomalous Nernst effect (ANE) Sakai and the negative magnetoresistance associated with the chiral anomaly due to the monopoles Burkov ; XHuang ; Zhang .

A prescription for the Weyl semimetals is to lift the degeneracy in the Dirac nodes by breaking symmetry. The Weyl semimetals with broken spatial inversion symmetry have been confirmed in several materials, e.g., transition metal pnictides Xu ; Souma ; WFFBD and dichalcogenides Soluyanov ; Feng , whereas those with broken time-reversal symmetry have been rather scarce, with only a few theoretical proposals WTVS ; XWWDF ; KF and experiments under the magnetic field Suzuki ; Sakai . Recently, however, a kagome ferromagnet Co-based shandite, Co3Sn2S2, has been discovered to possess the Weyl nodes by spontaneous breaking of time-reversal symmetry, in the vicinity of 6060 meV from the Fermi level QXu ; Wang ; Liu . Indeed, theoretical and experimental studies revealed that the giant AHE and ANE observed in this compound are of the intrinsic contribution from the Weyl nodes QXu ; Wang ; Liu ; Guin ; Yang ; Minami ; Yanagi .

Refer to caption
Figure 1: Lattice structures of the bulk and thin films of Co3Sn2S2. a, Bulk structure. The black box represents the conventional unit cell which contains three unit cells. b, Top view of a kagome plane composed of Co ions. c-e, Side views of the monolayer, bilayer and trilayer systems with Sn terminations. f-h, Corresponding figures with S terminations. The lattice structures are visualised by VESTA MI .

Co3Sn2S2 has a quasi-two-dimensional lattice structure with Co kagome layers, as shown in Fig. 1a, b. Recently, two types of Co kagome monolayers with different surface terminations, Co3Sn3S2 and Co3SnS2, were investigated theoretically Muechler . As a remnant of the Weyl nodes in the bulk, both monolayers are predicted to show a large AHE; especially in Co3Sn3S2 with Sn-end surfaces, the Weyl gap opens at the Fermi level, which leads to the quantum AHE. Stimulated by this theoretical prediction, experimental attempts to fabricate monolayer systems have been carried out, and the magnetism, transport phenomena and surface states have been discussed for atomically thin films of Co3Sn2S2 Fujiwara ; Shiogai ; Ikeda1 ; Ikeda2 . In the theoretical study, however, the lattice parameters were fixed at the bulk values for both monolayers, despite the fact that the lattice structures are expected to be relaxed in a different manner depending on the surface termination, sensitively affecting the magnetism and band topology of the atomically thin films GG ; BHuang . More importantly, since the Weyl points are the topological singularities predicted for the three-dimensional bulk systems, it remains elusive how they appear while changing the film thickness.

In this study, we perform comprehensive ab initio calculations of the band topology and transport properties for thin films of Co3Sn2S2, with special attention to the optimal lattice structures and stable magnetic states. We study monolayers, bilayers and trilayers of Co kagome planes with two different surface terminations by Sn and S atoms (Fig. 1c–h). From the obtained magnetic and electronic states, we compute the anomalous Hall conductivity and the anomalous Nernst conductivity. Through the systematic study in comparison with the bulk, we discuss the evolution of the topological properties with the number of kagome layers from one, two, three to infinity.

Results and discussions

Lattice structures and magnetic states. First, we optimise the lattice structures of each system (see Methods). The optimised structures are summarised in Table 1 (see also Supplementary Note 1). All the thin films maintain nearly the p3¯m1p\bar{3}m1 symmetry. Compared to the bulk, the in-plane lattice constants change by less than 0.6\sim 0.6 % for the Sn-end systems, while substantial decreases are observed for the S-end systems, maximally about 33 % for the monolayer case. Such lattice deformation was not taken into account in the previous study for the monolayers Muechler . We note that the distance between the Co layers for bilayers and trilayers does not change so much from the bulk value, while it is slightly larger for the Sn-end systems than the S-end ones. We also estimate the differences in the formation energies between Sn-end and S-end thin films in each layer number (see Methods). The estimates suggest that the Sn-end monolayer, bilayer and trilayer are more stable than the S-end counterparts by 1.74-1.74, 1.60-1.60 and 1.55-1.55 eV per formula unit, respectively.

System Lattice constant (Å)({\mathrm{\mathring{A}}}) Co layer distance (Å)({\mathrm{\mathring{A}}}) Magnetic state Co moment (μB\mu_{\rm B})
Sn-end monolayer 5.325 - FM c\parallel c 0.415
bilayer 5.355 4.434 FM c\parallel c 0.372
trilayer 5.370 4.436 FM c\parallel c 0.365 (top, bottom)
0.362 (middle)
S-end monolayer 5.194 - FM c\parallel c 1.01
bilayer 5.276 4.410 interlayer AFM b\parallel b^{\prime} 0.339
trilayer 5.310 4.412 interlayer ferri c\parallel c 0.207 (top, bottom)
0.080 (middle)
bulk 5.358 (a,b)(a,b) 4.403 FM c\parallel c 0.350
13.123 (c)(c)
Table 1: Optimized lattice structures and stable magnetic states. The lattice structure for the bulk is taken from the experimental data Li , whose in-plane lattice constants and the Co layer distance are used for the initial guess for the optimization of the thin films. aa, bb and cc denote the crystallographic axes defined in Fig. 1. The structural optimizations are performed for a FM state, except for the S-end bilayer and trilayer where we assume interlayer AFM and ferrimagnetic states, respectively, by nonrelativistic ab initio calculations. For all the cases, the p3¯m1p\bar{3}m1 symmetry is almost preserved, while the lattice constant is considerably shortened in the S-end cases. All the Sn-end systems exhibit out-of-plane FM, whose Co magnetic moments approach the bulk value while increasing the layer number. In contrast, the S-end systems show different magnetic states depending on the layer number: out-of-plane FM for monolayer, interlayer AFM with in-plane FM moment directed to 𝒃=𝒃𝒂/2{\bm{b}}^{\prime}={\bm{b}}-{\bm{a}}/2 in each layer for bilayer, and interlayer ferrimagnetic state with out-of-plane FM moment in each layer for trilayer, where 𝒂\bm{a} and 𝒃\bm{b} are the in-plane lattice vectors. See also Fig. 2a, e, i, m and Fig. 3a, e, i.

Next, for the optimised structures, we compare the ab initio energy for various magnetic states (see Supplementary Note 2). The lowest-energy states and the magnitudes of Co moments are summarised in Table 1 (see Methods); see also Fig. 2a, e, i, m and Fig. 3a, e, i. For the bulk, a ferromagnetic state is obtained with Co moment of 0.3500.350 μB\mu_{\rm B} along the out-of-plane direction, where μB\mu_{\rm B} is the Bohr magneton; the total magnetic moment per unit cell is 1.001.00 μB\mu_{\rm B} because of small but nonzero antiparallel magnetic moments at Sn and S atoms. The result agrees well with the previous studies Liu ; Wang ; Yanagi . For the Sn-end thin films, similar out-of-plane ferromagnetic states are obtained for all the monolayer, bilayer and trilayer systems. The Co moment changes with the number of Co layers: 0.4150.415 μB\mu_{\rm B} for monolayer, 0.3720.372 μB\mu_{\rm B} for bilayer, and 0.3650.365 μB\mu_{\rm B} (top and bottom layers) and 0.3620.362 μB\mu_{\rm B} (middle layer) for trilayer; the value is monotonically reduced to the bulk one as the number of Co layers increases. We note that the net moment per primitive unit cell is 1.001.00, 2.012.01 and 3.003.00 μB\mu_{\rm B} for monolayer, bilayer and trilayer, respectively, indicating that the value per Co layer is the same as in the bulk. In contrast, for the S-end thin films, we obtain different magnetic states depending on the layer number: an out-of-plane ferromagnetic state for monolayer, an intralayer in-plane ferromagnetic and interlayer antiferromagnetic state for bilayer, and an intralayer out-of-plane ferromagnetic and interlayer ferrimagnetic state for trilayer, as shown in Fig. 3a, e, i, whose net magnetic moments per unit cell are 3.013.01, 0.000.00 and 1.001.00 μB\mu_{\rm B}, respectively. The Co moment is also largely different from the Sn-end cases: 1.011.01 μB\mu_{\rm B} for monolayer, 0.3390.339 μB\mu_{\rm B} for bilayer, and 0.2070.207 μB\mu_{\rm B} (top and bottom layers) and 0.0800.080 μB\mu_{\rm B} (middle layer) for trilayer. The contrasting behaviours between the Sn- and S-end series are summarised in Fig. 4a.

Our results indicate that the ferromagnetic order within each Co kagome layer is stable, regardless of the number of Co layers and the surface termination. In addition, the magnetic order has out-of-plane anisotropy, except for the S-end bilayer system. These suggest that the out-of-plane ferromagnetic state of the Co layer, which is a building block for the bulk system, is robust in most cases of thin films. Meanwhile, our results reveal that the surface termination matters to the interlayer magnetism as well as the magnetic anisotropy. Analysing the maximally-localised Wannier functions, we indeed find that the spatial extensions of the Co dd orbitals are substantially different for different surface terminations, which would be relevant to the interlayer magnetic interactions (see Supplementary Note 3).

Refer to caption
Figure 2: Magnetic states, Fermi surfaces, band structures with the Berry curvature Ωnk\Omega_{n{{\bm{k}}}}, the anomalous Hall conductivity σH\sigma_{\rm H} and the anomalous Nernst conductivity αN\alpha_{\rm N} for the Sn-end films: a-d, monolayer, e-h, bilayer and i-l, trilayer. For comparison, we present the data for bulk in m-p. The orange arrows in a, e, i and m represent the magnetic moments on the Co ions. The black or gray hexagons in b, f and j as well as c, g and k are the first Brillouin zone, while those in n and o depict the kz=0k_{z}=0 cut of the Brillouin zone of the bulk. M, M, Γ\Gamma and K are the specific momenta in the first Brillouin zone and Mn,Bn,TnM_{n},B_{n},T_{n} and BunBu_{n} denote the band labels near the Fermi level set at 0 eV for monolayer, bilayer, trilayer and bulk, respectively. The band structures obtained from the fully relativistic and nonrelativistic calculations are represented by solid and broken lines, respectively, and σH\sigma_{\rm H} at zero temperature T=0T=0 and αN\alpha_{\rm N} at the several temperatures are plotted in d, h, l and p, where e,he,h and kBk_{\rm B} are the elementary charge, Planck constant and Boltzmann constant, respectively. An out-of-plane ferromagnetic state is obtained throughout this Sn-end series, The monolayer is a Chern insulator with the Weyl gap between the bands M1M_{1} and M2M_{2}, resulting to the quantised σH=3e2/h\sigma_{\rm H}=3e^{2}/h. The bilayer is metallic, while having a similar Weyl gap between the bands B1B_{1} and B2B_{2} above the Fermi level, leading to the plateau (unquantised) σH6e2/h\sigma_{\rm H}\simeq 6e^{2}/h. The trilayer hosts electron and hole pockets and Weyl gaps, similar to the bulk. σH\sigma_{\rm H} is always positive at Fermi level and shows similar energy dependence in this series.

Electronic structures and band topology. The differences in the lattice structures and the stable magnetic states result in qualitatively different electronic states between the Sn- and S-end series. We show the Fermi surfaces in Fig. 2b, f, j, n and Fig. 3b, f, j and the band structures near the Fermi level in Fig. 2c, g, k, o and Fig. 3c, g, k. In the band structures, we also plot the Berry curvature for each band by colour which is computed for the tight-binding models constructed by the Wannier functions obtained from the ab initio calculations; we calculate the Chern number of each band as well (see Methods).

Let us first discuss the Sn-end films in Fig. 2. In the case of the monolayer, the band structure has a gap of 50\sim 50 meV at the Fermi level between the bands M1M_{1} and M2M_{2}, and there is no Fermi surface. The bands M1M_{1} and M2M_{2} have the Chern number 66 and 3-3, respectively. The gap is opened by the spin-orbit coupling at the Weyl nodes on the Γ\Gamma-K\rm K line in momentum space, resulting in the large values of the Berry curvatures near the band top and bottom. Thus, the system is an insulator with the Weyl gap, as pointed out in the previous study without structural optimisation Muechler . This is reasonable, given the little changes in the lattice structure as well as the magnetism after the optimisation in our calculations. In the bilayer, however, the system becomes metallic with the electron Fermi surfaces around the K\rm K point in the band B1B_{1} and the pairs of the hole pockets on both sides of each Γ\Gamma-M\rm M line in the band B2B_{2}. The Chern numbers of the bands B1B_{1} and B2B_{2} are 99 and 1-1, respectively. By closely looking at the band structure, we can identify the Weyl gap of 30\sim 30 meV between B1B_{1} and B2B_{2} slightly above the Fermi level, which appears to correspond to that in the monolayer case but split into two, leading to the hole pocket pair; see also the band structure in Fig. 2h. In the trilayer system, the band structure becomes more complicated, but still retains the characteristic features in the monolayer and bilayer: One of the Weyl gaps opens between the bands T2T_{2} and T3T_{3} on the Γ\Gamma-K line above the Fermi level, while the other two are along the Γ\Gamma-M line, as shown in the band structure in Fig. 2l. The Chern numbers of the bands T1T_{1}, T2T_{2} and T3T_{3} are 3-3, 66 and 33, respectively. These overall systematic changes of the electronic states appear to smoothly connect to the bulk. In fact, as shown in Fig. 2n, o, the kz=0k_{z}=0 cut of the bulk band structure shows similar distribution of the Weyl gap and the Berry curvature to the above Sn-end films. In particular, the large Berry curvature in the Sn-end films can be regarded as a remnant of the intersections of the nodal gap in the bulk system QXu ; Minami . Thus, in the Sn-end series, where the out-of-plane ferromagnetic state persists, the electronic structure and the topological properties change systematically as the number of Co layers increases.

Next, we discuss the S-end cases. In the monolayer, the system is metallic with two electron pockets around the Γ\Gamma point as shown in Fig. 3b, in contrast to the Sn-end case. The result is also different from the previous study without structural optimisation Muechler . The difference is ascribed to the substantial shrinkage of the lattice constants shown in Table 1. We find considerable values of the Berry curvature in the bands close to the Fermi level, which affect the transport properties as discussed later. In the case of the bilayer, the system is also metallic with one electron pocket around the Γ\Gamma point; all the bands are doubly degenerate due to the interlayer antiferromagnetic ordering, cancelling out the Berry curvature. In the trilayer, there are three bands forming two electron pockets around the Γ\Gamma point, one electron pocket around the K point, and one hole pocket around the M point. In each band, the Berry curvature takes nonzero values, similar to the monolayer case. In addition, we find two small Weyl gaps between the bands t1t_{1} and t2t_{2} along the M\rm M-Γ\Gamma line and another one between t2t_{2} and t3t_{3} along Γ\Gamma-K\rm K line close to the Fermi level. Although this apparently resembles the case of Sn-end trilayer and bulk systems, these bands show qualitatively different Berry curvatures due to the different magnetic state. Thus, in stark contrast to the Sn-end cases, the S-end series shows no systematic change not only in the magnetic orders but also in the electronic structure and the band topology.

Refer to caption
Figure 3: Magnetic states, Fermi surfaces, band structures with the Berry curvature Ωnk\Omega_{n{{\bm{k}}}}, the anomalous Hall conductivity σH\sigma_{\rm H} and the anomalous Nernst conductivity αN\alpha_{\rm N} for the S-end films: a-d, monolayer, e-h, bilayer and i-l, trilayer. The notations are similar to those of Fig. 2. In this series, the stable magnetic states change with the number of layers: out-of-plane ferromagnetic, in-plane interlayer antiferromagnetic and out-of-plane interlayer ferrimagnetic states for the monolayer, bilayer and trilayer, respectively. While all the cases are metallic, the Berry curvature and the transport properties do not behave systematically with respect to the layer number. In particular, both σH\sigma_{\rm H} and αN\alpha_{\rm N} vanish in the bilayer case because of the band degeneracy.
Refer to caption
Figure 4: Layer number dependence of the magnetic and transport properties of the thin films. a, The averaged magnetic moment per Co ion. In the Sn-end films where the out-of-plane ferromagnetic state is stable, the magnetic moment changes smoothly to the bulk value. In contrast, in the S-end cases, it shows nonmonotonic behaviour, reflecting the different magnetic states depending on the layer number. b, The anomalous Hall conductivity σH\sigma_{\rm H} at zero temperature and the anomalous Nernst conductivity αN\alpha_{\rm N} at kBT=5k_{\rm B}T=5 meV. σH\sigma_{\rm H}, which reflects the band topology through the Berry phase, has large positive values in the Sn-end series, whereas small negative values for monolayer and trilayer, and zero in bilayer in the S-end series. αN\alpha_{\rm N} also shows contrasting behaviours between the two cases.

Transport properties. Now we turn to the transport properties. First of all, in the bulk case, our results on the anomalous Hall conductivity σH\sigma_{\rm H} and the anomalous Nernst conductivity αN\alpha_{\rm N} well reproduce the previous ones Liu ; Wang ; Yanagi , as shown in Fig. 2p. Then, in the Sn-end series, the monolayer shows a quantised AHE with σH=3e2/h\sigma_{\rm H}=3e^{2}/h, where ee and hh are the elementary charge and the Planck constant, respectively, corresponding to the Weyl gap in the blue-shaded energy window in Fig. 2d including the Fermi level. The result coincides with the previous one without structural optimisation Muechler . In the bilayer, we find that σH\sigma_{\rm H} exhibits a plateau at 6e2/h\simeq 6e^{2}/h slightly above the Fermi level in the blue-shaded region, which corresponds to the Weyl gap between the bands B1B_{1} and B2B_{2}, as shown in Fig. 2h. The plateau with almost twice σH\sigma_{\rm H} of the monolayer case is due to the systematic change of the band structure from monolayer to bilayer mentioned above. Note that the contribution from the band B1B_{1} crossing the Fermi level is negligible. Such a plateau is absent in the trilayer case, but a large value of σH\sigma_{\rm H} is still observed in the energy window corresponding to the gap between the bands T2T_{2} and T3T_{3}, as shown in Fig. 2l. Thus, in the Sn-end series, we obtain systematic evolution of the AHE, from the quantum AHE in the monolayer to the large AHE in the bulk limit, reflecting the band structure with the Weyl gap. We note that σH\sigma_{\rm H} is always positive in the Sn-end series. The results are summarised in Fig. 4b.

In contrast, σH\sigma_{\rm H} does not show systematic changes in the S-end cases, as shown in Fig. 3d, h and l: σH/(e2/h)0.34\sigma_{\rm H}/(e^{2}/h)\simeq-0.34, 0.000.00 and 2.71-2.71 for the monolayer, bilayer and trilayer, respectively. The absence of the AHE in the bilayer case is due to the cancellation of the Berry curvature by the band degeneracy discussed above, and the negative values of σH\sigma_{\rm H} for the monolayer and trilayer originate from the different band topology from the Sn-end series. Note that in the monolayer case, σH\sigma_{\rm H} is largely different from that of the previous study Muechler because of the structural optimisation.

We also compute the anomalous Nernst conductivity αN\alpha_{\rm N} for both series of the films. According to the generalised Mott formula αN=kBe𝑑εs(ε)σH(ε)ε\alpha_{\rm N}=-\frac{k_{\rm B}}{e}\int d{\varepsilon}s({\varepsilon})\frac{\partial\sigma_{\rm H}({\varepsilon})}{\partial{\varepsilon}} XYFN ; Yanagi , αN\alpha_{\rm N} is related with the energy derivative of σH\sigma_{\rm H}. This holds for our results, as plotted in Fig. 2d, h, l, p and Fig. 3d, h, l. In the Sn-end series, αN\alpha_{\rm N} is almost zero at the Fermi level for the monolayer because of the quantisation of σH\sigma_{\rm H}, while it takes a negative value for the bilayer and trilayer cases corresponding to the positive derivative of σH\sigma_{\rm H}. Interestingly, αN\alpha_{\rm N} takes a large negative value for the bilayer since the Fermi level is on the verge of the plateau-like feature of σH\sigma_{\rm H} where σH\sigma_{\rm H} increases rapidly. Since αN\alpha_{\rm N} is positive in the bulk, our results suggest a sign change while increasing the number of Co layers, in contrast to σH\sigma_{\rm H}. Meanwhile, in the S-end cases, αN\alpha_{\rm N} vanishes for the bilayer, while it takes small negative values for the monolayer and trilayer. The layer number dependences for both cases are summarised in Fig. 4b.

Coulomb interactions. Let us comment on the effect of Coulomb interactions. We tested the GGA+UU calculation for the S-end monolayer and bilayer systems. The results indicate that the S-end monolayer maintains the metallic state with modifications of the band structure, while the S-end bilayer shows a transition to the FM state around U2U\sim 2 eV (see Supplementary Note 4). However, in the bulk Co shandite, the results using the GGA+UU method are inconsistent with experimental findings YXu , suggesting that this method is not be suitable for this compound. Instead, a renormalisation of the band structure obtained by the GGA method explains well the ARPES measurements DFLiu and optical responses YXu ; Okamura . Given the smooth connection to the bulk in the Sn-end systems, we expect that this holds also for the thin films studied here and our GGA results would be useful for comparison with experiments. Further investigation on the effect of Coulomb interactions is left to future research.

Conclusions

Our systematic ab initio study for the thin films of Co-based shandite revealed that the number of Co kagome layers and the surface termination are both relevant to the lattice structure, the magnetic state, the electronic band structure and its topology, and transport properties. We found that the Sn-end series shows similar behaviours to the bulk, and retains the large AHE down to the monolayer limit where the quantum AHE is realised, reflecting the systematic change of the gapped Weyl nodes in the band structure. In contrast, the S-end series exhibits nonmonotonic behaviours with respect to the layer number, owing to the dominantly antiferromagnetic interlayer coupling. Our results would stimulate further experimental studies of the thin films of Co-based shandite to realise the quantum AHE in the monolayer form. The important implication of our results is that the measurements of the AHE and ANE as well as the magnetism will distinguish the film thickness and the surface termination, both of which are usually hard to directly identify in experiments. In particular, the sign of σH\sigma_{\rm H}, which is positive in the Sn-end films while negative in the S-end films, can be relevant measurement. Furthermore, the different sign of αN\alpha_{\rm N} from the bulk will also be useful to measure the film thickness. Furthermore, our prediction of the systematic evolution of the topological band structure would stimulate optical measurements, which have been useful to detect the chirality and gap structure of the Weyl nodes away from the Fermi level Ma ; YXu ; Okamura .

Methods

DFT calculation. The OpenMX code OpenMX ; Ozaki was used for structural optimisation and electronic structure calculations based on the density functional theory (DFT). The exchange-correlation functional was considered within the generalised gradient approximation (GGA) proposed by Perdew-Burke-Ernzerhof (PBE) PBE and the norm-conserving pseudopotentials were used. The Kohn-Sham wave functions were expressed by superpositions of pseudo-atomic orbitals as a basis set, which are chosen as Co6.0S-s3p2d1, Sn7.0-s3p2d2 and S6.0-s2p2d1 for bulk and monolayers, and Co6.0S-s3p3d3, Sn7.0-s4p3d1 and S6.0-s2p2d1 for bilayers and trilayers; see Ref. OpenMX for the details. For the calculations of thin films, we prepared the slabs with the bulk in-plane lattice parameter (a=5.358Åa=5.358~{}{\mathrm{\mathring{A}}} Li ) and inserted the vacuum space along the cc axis which is larger than 15Å15~{}{\mathrm{\mathring{A}}}. The quasi-Newton method was used for the relaxation of the atomic positions and the lattice vectors until the residual force becomes lesser than 0.01eVÅ10.01~{}{\rm eV}{\mathrm{\mathring{A}}}^{-1} per atom. The structural optimisation was performed by nonrelativistic calculations for the ferromagnetic state, except for the S-end bilayer and trilayer systems, where we took interlayer antiferromagnetic and ferrimagnetic states, respectively. Then, the electronic structure calculations were performed by the fully relativistic calculations TH , which incorporate the effect of spin-orbit coupling, for various magnetic states (ferromagnetic, collinear antiferromagnetic and 120-degree noncollinear antiferromagnetic for the intraplane, and ferromagnetic and antiferromagnetic for the interplane), and employ the lowest-energy solution. We set the cutoff energy for the FFT grid to 1800 Ry, and sampled the Brillouin zone with 16×16×116\times 16\times 1 and 16×16×1616\times 16\times 16 𝒌\bm{k}-points for the thin films and the bulk, respectively. We confirmed that the lowest-energy magnetic states do not change in the calculations with 24×24×124\times 24\times 1 and 30×30×130\times 30\times 1 𝒌{{\bm{k}}}-points. We estimated the difference in the formation energy Freysoldt ; SZTZ between Sn-end and S-end thin films. The formation energy for each surface termination is given as Ef(Co3nSn2n±1S2n)=EDFT(Co3nSn2n±1S2n)3nEDFT(Co)(2n±1)EDFT(Sn)2nEDFT(S)E_{\rm f}({\rm Co}_{3n}{\rm Sn}_{2n\pm 1}{\rm S}_{2n})=E_{\rm DFT}({\rm Co}_{3n}{\rm Sn}_{2n\pm 1}{\rm S}_{2n})-3nE_{\rm DFT}({\rm Co})-(2n\pm 1)E_{\rm DFT}({\rm Sn})-2nE_{\rm DFT}({\rm S}), where EDFTE_{\rm DFT} is total DFT energy, nn is the layer number and ±\pm denotes Sn-end and S-end films, respectively. The difference in the formation energy of the nn-layer films is calculated as ΔEf=EDFT(Co3nSn2n+1S2n)EDFT(Co3nSn2n1S2n)2EDFT(Sn).\Delta E_{\rm f}=E_{\rm DFT}({\rm Co}_{3n}{\rm Sn}_{2n+1}{\rm S}_{2n})-E_{\rm DFT}({\rm Co}_{3n}{\rm Sn}_{2n-1}{\rm S}_{2n})-2E_{\rm DFT}({\rm Sn}). We here set the relative chemical potential as zero for each element; comprehensive studies considering various chemical potentials should be done more systematically elsewhere SZTZ . The local magnetic moments are calculated from the Mulliken population analysis.

Band topology and transport properties. The Bloch functions obtained by the DFT calculations were projected to the Wannier functions within the maximal localisation procedure MV ; SMV using the OpenMX code WOT . We employed Co dd, Sn ss and pp, and S pp orbitals. The target Bloch states were chosen by setting the outer energy window properly for each system; we confirmed that the tight-binding models constructed from the Wannier functions well reproduced the original DFT band structure within the inner energy window which was also properly chosen for each case. Using the obtained tight-binding models, the anomalous Hall conductivity σH\sigma_{\rm H} and the anomalous Nernst conductivity αN\alpha_{\rm N} were calculated based on the Kubo formula:

σH\displaystyle\sigma_{\rm H} =e2Vd𝒌BZnf(En𝒌)Ωn𝒌,\displaystyle=-\frac{e^{2}}{\hbar V_{d}}\sum_{{\bm{k}}\in{\rm BZ}}\sum_{n}f(E_{n{\bm{k}}})\Omega_{n{\bm{k}}}, (1)
αN\displaystyle\alpha_{\rm N} =ekBVd𝒌BZns(En𝒌)Ωn𝒌,\displaystyle=\frac{ek_{\rm B}}{\hbar V_{d}}\sum_{{\bm{k}}\in{\rm BZ}}\sum_{n}s(E_{n{\bm{k}}})\Omega_{n{\bm{k}}}, (2)

respectively, where kBk_{\rm B} is the Boltzmann constant, \hbar is Dirac’s constant, VdV_{d} is a dd-dimensional volume of the system, f(ε)=(e(εμ)/kBT+1)1f({\varepsilon})=({{\rm e}}^{({\varepsilon}-\mu)/k_{\rm B}T}+1)^{-1} and s(ε)=f(ε)lnf(ε)(1f(ε))ln(1f(ε))s({\varepsilon})=-f({\varepsilon})\ln f({\varepsilon})-(1-f({\varepsilon}))\ln(1-f({\varepsilon})) are the Fermi distribution function and the entropy density, respectively; the summations are taken for the wave number 𝒌{{\bm{k}}} within the first Brillouin zone and for the band index nn. In Eqs. (1) and (2), Ωn𝒌\Omega_{n{{\bm{k}}}} is the Berry curvature calculated by

Ωn𝒌=mn2Im[Jx,nmJy,mn](En𝒌Em𝒌)2,\displaystyle\Omega_{n{{\bm{k}}}}=-\sum_{m\neq n}\frac{2{\rm Im}\left[J_{x,nm}J_{y,mn}\right]}{(E_{n{{\bm{k}}}}-E_{m{{\bm{k}}}})^{2}}, (3)

with the current operator

Jξ,nm=n𝒌|H𝒌kξ|m𝒌,\displaystyle J_{\xi,nm}=\left\langle n{{\bm{k}}}\left|\frac{\partial H_{{\bm{k}}}}{\partial k_{\xi}}\right|m{{\bm{k}}}\right\rangle, (4)

where mm and nn are the band indices, ξ=x,y\xi=x,y, H𝒌H_{{\bm{k}}} is the tight-binding Hamiltonian obtained from the maximally-localised Wannier functions, and En𝒌E_{n{{\bm{k}}}} and |n𝒌\left.|n{{\bm{k}}}\right\rangle are the eigenvalue and the eigenvector of H𝒌H_{{\bm{k}}}, respectively. In addition, we calculate the Chern number CnC_{n} for the each band nn by FHS

Cn=12π𝒌BZImlogU12U23U34U41,\displaystyle C_{n}=\frac{1}{2\pi}\sum_{{\bm{k}}\in{\rm BZ}}{\rm Im}\log U_{12}U_{23}U_{34}U_{41}, (5)

where Uijn𝒌i|n𝒌jU_{ij}\equiv\langle n{{\bm{k}}}_{i}|n{{\bm{k}}}_{j}\rangle is calculated at each plaquette on the equally-spaced 𝒌{{\bm{k}}}-grid in the first Brillouin zone. The number of the 𝒌\bm{k}-mesh in the first Brillouin zone was taken as 2000×20002000\times 2000 for monolayers and bilayers, 2800×28002800\times 2800 for the S-end trilayer, 6000×60006000\times 6000 for the Sn-end trilayer and 360×360×360360\times 360\times 360 for the bulk. As for αN\alpha_{\rm N}, the temperatures are set as kBT=k_{\rm B}T= 0.1, 1, 5 and 10 meV, which are chosen to be lower than the Curie temperature 130 K of the thin films with the thickness 1.3 nm (roughly correspond to the trilayer) Ikeda1 .

Acknowledgements

The authors thank M. H. N. Assadi, K. Fujiwara, K. Nomura, S. Okumura, A. Ozawa and A. Tsukazaki for fruitful discussions. The parts of the calculation have been done using the facilities of the Supercomputer Center, the Institute for Solid State Physics, the University of Tokyo. This work is supported by JST CREST (Grant No. JPMJCR18T2) and JSPS KAKENHI (Grant No. JP21K13875 and JP22K03509).

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Supplementary Information for “One, two, three, \ldots infinity: topological properties of thin films of Co-based shandite”

Supplementary Note 1: Details of the optimized lattice structures

We present additional information of the optimised lattice structures in Supplementary Table 1: the averaged angles for neighbouring Co-Sn-Co and Co-S-Co bonds, θCoSnCo\theta_{\rm Co{{\mathchar 45\relax}}Sn{{\mathchar 45\relax}}Co} and θCoSCo\theta_{\rm Co{{\mathchar 45\relax}}S{{\mathchar 45\relax}}Co}, respectively, and the averaged bond lengths of the nearest-neighbour Co ions in different layers, dinterCod_{\rm inter{{\mathchar 45\relax}}Co}. In most cases, the bond angles and lengths do not change so much from the bulk values, except for θCoSCo\theta_{\rm Co{{\mathchar 45\relax}}S{{\mathchar 45\relax}}Co} at the surfaces.

System θCoSnCo\theta_{\rm Co{{\mathchar 45\relax}}Sn{{\mathchar 45\relax}}Co} (degree) θCoSCo\theta_{\rm Co{{\mathchar 45\relax}}S{{\mathchar 45\relax}}Co} (degree) dinterCod_{\rm inter{{\mathchar 45\relax}}Co} (Å)({\mathrm{\mathring{A}}})
Sn-end monolayer 58.8 (A-I, A-II) 73.6 (A-1, A-2) -
bilayer 60.4 (A-I, B-IV) 73.1 (A-1, B-4) 4.69
58.9 (A-II, B-II) 77.5 (A-2, B-3)
trilayer 60.6 (A-II, C-IV) 73.3 (A-1, C-6) 4.67
59.0 (A-II, C-III) 77.6 (A-2, C-5)
59.6 (B-II, B-III) 76.4 (B-3, B-4)
S-end monolayer - 72.0 (A-1, A-2) -
bilayer 58.1 (A-II, B-II) 71.9 (A-1, B-4) 4.65
trilayer 76.9 (A-2, B-3) 4.66
58.5 (A-II, C-III) 71.3 (A-1, C-6)
78.7 (A-2, C-5)
58.5 (B-II, B-III)
75.4 (B-3, B-4)
bulk 60.0 76.1 4.64
Supplementary Table 1: Additional information of the optimised lattice structures to Table 1 in the main text. θCoSnCo\theta_{\rm Co{{\mathchar 45\relax}}Sn{{\mathchar 45\relax}}Co} and θCoSCo\theta_{\rm Co{{\mathchar 45\relax}}S{{\mathchar 45\relax}}Co} denote the averaged angles for neighbouring Co-Sn-Co and Co-S-Co bonds, respectively, and dinterCod_{\rm inter{{\mathchar 45\relax}}Co} is the averaged bond length for the nearest-neighbour Co ions in different layers, depicted in Supplementary Figure 1a. Alphabets, Roman numbers and Arabic numbers in the parentheses specify the Co, Sn and S ions, respectively, depicted in Supplementary Figure 1b. The bonds in the same parenthesis are equivalent under the C2C_{2} rotation around the 𝒂\bm{a} or 𝒃\bm{b} axis.
Refer to caption
Supplementary Figure 1: Definitions of the bond angles and the ions used in Supplementary Table 1: a, θCoSnCo\theta_{\rm Co{{\mathchar 45\relax}}Sn{{\mathchar 45\relax}}Co} and θCoSCo\theta_{\rm Co{{\mathchar 45\relax}}S{{\mathchar 45\relax}}Co}, and b, the labels of the ions to specify the bonds for the monolayer, bilayer and trilayer cases.

Supplementary Note 2: Energy comparison for various magnetic states

We show in Supplementary Table 2 the energy for different magnetic states obtained by the fully relativistic ab initio calculations for the optimised lattice structures. As listed in Supplementary Figure 2, we took the initial states as ferromagnetic (FM) states, 120 degree noncollinear antiferromagnetic (120AFM) states, and intralayer FM and interlayer collinear antiferromagnetic (IAFM) states [interlayer collinear ferrimagnetic (IFRM) state for trilayer]. For the FM states, we considered three types whose magnetic moments are along the out-of-plane (cc) and two in-plane (aa and bb^{\prime}) directions; for the 120AFM states, we considered three types with different chirality and helicity; for the IAFM states, we considered three types similar to the FM cases. For the Sn-end systems, the FM states with the out-of-plane magnetic moments are the most stable, similar to the bulk, with the energy differences from the in-plane FM states being about 1\sim2 meV. In contrast, for the S-end systems, the stable magnetic states and the directions of the magnetic moments depend on the layer number as described in the main text. The energy differences between the most stable states and the other competing states are less than 11 meV, which are smaller than the Sn-end cases. This implies that the magnetic anisotropy is smaller for the S-end films than the Sn-end ones.

System PM FM 120AFM IAFM/IFRM
aa bb^{\prime} cc aa bb^{\prime} cc
Sn-end monolayer 122 0.993 1.01 0 85.7 - - -
bilayer 162 1.57 1.60 0 128 30.1 30.1 29.3
trilayer 219 2.28 2.28 0 195 71.4 71.4 70.4
S-end monolayer 393 0.033 0.034 0 162 - - -
bilayer 79.7 28.6 28.5 29.5 - 0.009 0 0.532
trilayer 34.7 22.9 23.1 22.8 - 0.030 0.046 0
bulk 58.1 0.619 0.623 0 - - - -
Supplementary Table 2: Energy per unit cell for various magnetic states in the unit of meV. The schematic pictures of the magnetic states are shown in Supplementary Figure 2. The values are measured from the lowest one: FM cc for all the Sn-end films, and FM cc, IAFM bb^{\prime} and IFRM cc for the S-end monolayer, bilayer and trilayer, respectively. aa, bb^{\prime} and cc specify the direction of the magnetic moments. For the 120AFM states, the energy was obtained by averaging the values for three different 120 degree structures chosen such that one of the Co spin directs in the aa, bb and bb^{\prime} directions. “-” represents the magnetic states not stable or not considered.
Refer to caption
Supplementary Figure 2: Schematic pictures of the magnetic states considered in the ab initio calculations. The black arrows represent the directions of each Co magnetic moment on the kagome lattice.

Supplementary Note 3: Maximally-localized Wannier functions for Co\rm Co dd orbitals

We display the maximally-localised Wannier functions with Co dz2d_{z^{2}} and dx2y2d_{x^{2}-y^{2}} orbital characters in Supplementary Figure 3, which are mostly different between the Sn- and S-end films among the dd orbitals. The results are obtained for the paramagnetic state by the relativistic calculations. In all cases, the Wannier functions in the S-end systems, especially of the Co ions near the surfaces, have wider spatial extensions to the interlayer directions. This difference leads to different overlaps of the wave functions between the Sn- and S-end systems, possibly being relevant to the difference in the interlayer magnetic interactions.

Refer to caption
Supplementary Figure 3: Isosurfaces of the maximally-localised Wannier functions with Co dz2d_{z^{2}}- and dx2y2d_{x^{2}-y^{2}}-like orbital characters. The green and yellow surfaces represent the isosurfaces of the real part of the Wannier functions being 0.0070.007 and 0.007-0.007, respectively.

Supplementary Note 4: GGA+UU calculation

Supplementary Figure 4 shows the results of the GGA+UU calculations for the S-end monolayer under different UU on the Co dd electrons within the fully relativistic framework. We find that the band gap is not opened up at least to U=4U=4 eV, indicating that the S-end monolayer remains metallic even when including the Coulomb interactions at the level of GGA+UU. However, the transport properties will be altered because of the large modification of the band structure. We also performed GGA+UU calculations for the S-end bilayer, and find that the system turns into a FM state for U2U\gtrsim 2 eV, where the double band degeneracy is lifted and the anomalous Hall and Nernst effects are expected to occur.

Refer to caption
Supplementary Figure 4: GGA+UU calculations in S-end monolayer under the local Coulomb interaction on the Co dd electrons of U=0,1,2U=0,1,2 and 4 eV.