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Effects of scattering on the field-induced TcT_{c} enhancement in thin superconducting films in a parallel magnetic field

V. G. Kogan Ames National Laboratory - DOE, Ames, IA 50011, USA    R. Prozorov [email protected] Department of Physics & Astronomy, Iowa State University, Ames, IA 50011, USA Ames National Laboratory - DOE, Ames, IA 50011, USA
Abstract

The problem of a thin superconducting film in a parallel magnetic field, first discussed in the classical paper by Ginzburg and Landau for temperatures close to the critical, is revisited with the help of the microscopic BCS theory for arbitrary temperatures taking pair-breaking and transport scattering into account. While confirming experimental findings of the TcT_{c} enhancement by the magnetic field, we find that the transport scattering pushes the phase transition curve to higher fields and higher temperatures for nearly all practical scattering rates. Still, the TcT_{c} enhancement disappears in the dirty limit. We also consider intriguing changes, such as re-entrant superconductivity, caused to the phase boundary by pair-breaking magnetic ions spread on one of the film faces. These features await experimental verification.

I Introduction

Thin films are major elements of superconducting devices, such as bolometers, SQUIDs, fault-current limiters, and qubits for quantum computers. Their physical properties in the superconducting state determine the device performance metrics, such as quantum coherence. Unexpected properties of films in the parallel magnetic field were recorded [1]. The enhancement of superconductivity (SC) in thin films in parallel fields is now an established experimental fact [2, 3]. A few nontrivial mechanisms for this enhancement were suggested [3, 4]. However, the opinion expressed in [2] leans toward early work [5, 6], which describes this phenomenon as a consequence of the “bare” classical weak-coupling BCS theory.

The main point of this interpretation is that at the 2nd order phase transition, the order parameter satisfies a linear equation (as in Helfand and Werthamer treatment of the upper critical field Hc2(T)H_{c2}(T) [7])

𝚷2Δ=k2Δ,\displaystyle{\bm{\Pi}}^{2}\Delta=k^{2}\Delta\,, (1)

where 𝚷=+2πi𝑨/ϕ0{\bm{\Pi}}=\nabla+2\pi i{\bm{A}}/\phi_{0} with the vector potential 𝑨\bm{A} and the flux quantum ϕ0\phi_{0}. In fact, this equation holds at any 2nd order transition from normal to SC state away of Hc2H_{c2}, e.g. in proximity systems or at Hc3H_{c3}, provided k2=1/ξ2k^{2}=-1/\xi^{2} satisfies the self-consistency equation of the theory [8, 6]. It turned out that the coherence length ξ\xi so evaluated depends not only on temperature and scattering but also on the magnetic field (except in the dirty limit or near TcT_{c}). The field dependence has been confirmed in Scanning Tunneling measurements of the length scale of spatial variation of Δ\Delta [9], in μ\muSR data [10], and in data on macroscopic magnetization M(H)M(H) [11] for a number of materials.

Solving Eq. (1), one imposes certain boundary conditions on the order parameter Δ\Delta. In the bulk problem of Hc2H_{c2}, Δ(𝒓)\Delta(\bm{r}) should be finite everywhere, in the problem of Hc3H_{c3} for nucleation of SC at the sample surface one requires xΔ=0\partial_{x}\Delta=0 at the sample surface (xx is normal to the surface [12]), for a thin film in the parallel field this gradient is required to vanish on both film faces [6].

In this work, we extend the earlier treatment [6] by including pair-breaking scattering having in mind possible interpretations for experimental results described in [2]. Besides, we consider the effect of replacement of the condition xΔ=0\partial_{x}\Delta=0 at one of the film surfaces with Δ=0\Delta=0 to describe the pair-breaking by magnetic ions spread at this surface (in a manner described in [2]). The resulting phase transition curves have several surprising and unexpected features, which demonstrate an extreme sensitivity of these curves to boundary conditions.

Consider an isotropic material with both magnetic and non-magnetic scatterers; τm\tau_{m} and τ\tau are the corresponding average scattering times. The problem of the second order phase transition from the normal to SC phases can be addressed based on Eilenberger quasiclassical version of Gor’kov’s equations for normal and anomalous Green’s functions gg and ff. At the 2nd order phase transition, g=1g=1 and we are left with a linear equation for ff [13, 14]:

(2ω++𝐯𝚷)f=2Δ/+f/τ,\displaystyle(2\omega^{+}+{\bf v}\cdot{\bm{\Pi}})\,f=2\Delta/\hbar+\langle f\rangle/\tau^{-}\,, (2)
ω+=ω+12τ+,1τ±=1τ±1τm.\displaystyle\omega^{+}=\omega+\frac{1}{2\tau^{+}}\,,\qquad\frac{1}{\tau^{\pm}}=\frac{1}{\tau}\pm\frac{1}{\tau_{m}}\,. (3)

Here, 𝒗{\bm{v}} is the Fermi velocity, Δ(𝒓)\Delta({\bm{r}}) is the order parameter; Matsubara frequencies are defined by ω=πT(2n+1)\omega=\pi T(2n+1) with an integer nn; in the following (except some final results) we set =kB=1\hbar=k_{B}=1; \langle...\rangle stand for averages over the Fermi surface. Solutions ff of Eq. (2) along with Δ\Delta should satisfy the self-consistency equation:

Δ2πTlnTc0T=ω>0(Δωf),\frac{\Delta}{2\pi T}\ln\frac{T_{c0}}{T}=\sum_{\omega>0}\left(\frac{\Delta}{\omega}-\langle f\rangle\right)\,, (4)

where Tc0T_{c0} is the critical temperature in the absence of pair-breaking scattering.

Repeating the derivation of Ref. [8], one finds (see the outline in Appendix A):

f=Δ2τS2ω+τS,\langle f\rangle=\Delta\,\frac{2\tau^{-}S}{2\omega^{+}\tau^{-}-S}\,, (5)

where SS is given by a series

S\displaystyle S =\displaystyle= j,m=0(q2)jj!(2m+2j+1)((m+j)!m!)2(+β+)2m+2j\displaystyle\sum_{j,m=0}^{\infty}\frac{(-q^{2})^{j}}{j!(2m+2j+1)}\left(\frac{(m+j)!}{m!}\right)^{2}\left(\frac{\ell^{+}}{\beta^{+}}\right)^{2m+2j} (6)
×\displaystyle\times i=1m[k2+(2i1)q2],q2=2πHϕ0,\displaystyle\prod_{i=1}^{m}\left[k^{2}+(2i-1)q^{2}\right],\qquad q^{2}=\frac{2\pi H}{\phi_{0}}\,,

where

+=vτ+,β+=1+2ωτ+.\displaystyle\ell^{+}=v\tau^{+},\qquad\beta^{+}=1+2\omega\tau^{+}\,. (7)

This sum can be transformed to an integral, which is more amenable for the numerical work [6]:

S\displaystyle S =\displaystyle= πu01dμ(1+μ2)σ(1μ2)σ+1[erfcμucos(πσ)erfc1μu],\displaystyle\sqrt{\frac{\pi}{u}}\int_{0}^{1}\frac{d\mu\,(1+\mu^{2})^{\sigma}}{(1-\mu^{2})^{\sigma+1}}\left[{\rm erfc}\frac{\mu}{\sqrt{u}}-\cos(\pi\sigma){\rm erfc}\frac{1}{\mu\sqrt{u}}\right],
u\displaystyle u =\displaystyle= (q+β+)2.\displaystyle\left(\frac{q\ell^{+}}{\beta^{+}}\right)^{2}. (8)

Introducing dimensionless quantities:

h=H2πd2ϕ0=q2d2,P±=2πTc0τ±=P±Pmh=H\frac{2\pi d^{2}}{\phi_{0}}=q^{2}d^{2},\,\,\,\,P^{\pm}=\frac{\hbar}{2\pi T_{c0}\tau^{\pm}}=P\pm P_{m}\qquad (9)

and the reduced thickness

D=d2πTc0v,\displaystyle D=d\,\frac{2\pi T_{c0}}{\hbar v}\,, (10)

one obtains

u=hD2[P++t(2n+1)]2.\displaystyle u=\frac{h}{D^{2}[P^{+}+t(2n+1)]^{2}}\,. (11)

The parameter σ\sigma as defined in [6] is

σ=12(k2q21).\displaystyle\sigma=\frac{1}{2}\left(\frac{k^{2}}{q^{2}}-1\right)\,. (12)

This parameter depends on the phase transition in question: it is easy to see that σ=1\sigma=-1 at Hc2(T)H_{c2}(T). For Hc3H_{c3} near TcT_{c} of a half-space sample the result of Saint-James and DeGennes leads to σ=0.795\sigma=-0.795 [12]; transport scattering leads to the temperature dependence of σ\sigma [15, 16].

For numerical work we recast the self-consistency relation (4) combined with Eq. (5) to dimensionless form:

lnt=n=0[1n+1/22tS2t(n+1/2)+P+SP]\displaystyle-\ln t=\sum_{n=0}^{\infty}\left[\frac{1}{n+1/2}-\frac{2tS}{2t(n+1/2)+P^{+}-SP^{-}}\right]\qquad
(13)

with the reduced temperature t=T/Tc0t=T/T_{c0}.

II Symmetric boundary conditions 𝚫(±𝒅/𝟐)=𝟎\bm{\Delta^{\prime}(\pm d/2)=0}

As mentioned above, the order parameter at a 2nd order phase transition satisfies Π2Δ=k2Δ\Pi^{2}\Delta=k^{2}\Delta. Choose the plane (y,z)(y,z) parallel to the film and x=0x=0 in the film middle. Denoting

s=qx,η=k2/q2,s=qx,\qquad\eta=-k^{2}/q^{2}\,, (14)

we obtain a differential equation

Δ′′(s)s2Δ(s)=ηΔ(s),\Delta^{\prime\prime}(s)-s^{2}\Delta(s)=-\eta\Delta(s)\,, (15)

so η-\eta is the eigenvalue of the linear operator at the LHS. The general solution is:

Δ\displaystyle\Delta =\displaystyle= es2/2[F11(1η4,12,s2)+Cs1F1(3η4,32,s2)]\displaystyle e^{-s^{2}/2}\left[{}_{1}F_{1}\left(\frac{1-\eta}{4},\frac{1}{2},s^{2}\right)+Cs\,_{1}F_{1}\left(\frac{3-\eta}{4},\frac{3}{2},s^{2}\right)\right]

where F11{}_{1}F_{1} are confluent hypergeometric functions and CC is an arbitrary constant. The symmetry with respect to the film middle gives C=0C=0, and the condition Δ(±d/2)=0\Delta^{\prime}(\pm d/2)=0 yields

(1η)1F1(5η4,32,h4)=1F1(1η4,12,h4).(1-\eta)\,_{1}F_{1}\left(\frac{5-\eta}{4},\frac{3}{2},\frac{h}{4}\right)=\,_{1}F_{1}\left(\frac{1-\eta}{4},\frac{1}{2},\frac{h}{4}\right)\,. (17)

Hence, for a given field hh, the eigenvalue η\eta can take only a certain value, the root of this equation.

Given η(h)\eta(h), we evaluate σ=(k2/q21)/2=(η+1)/2\sigma=(k^{2}/q^{2}-1)/2=-(\eta+1)/2 for this value of hh, and, therefore, we can calculate S(u,σ)=S(h,t,n)S(u,\sigma)=S(h,t,n) for given PP, PmP_{m}, DD and solve the self-consistency equation for tt at this hh. Scanning hh we recover the whole transition curve curve t(h)t(h). In general, scanning tt would not work because h(t)h(t) might happen to be multi-valued.

The numerical results for purely transport scattering are shown in Fig. 1.

Refer to caption
Figure 1: (Color online) The upper panel: the phase boundary h(t)h(t) for a set of different transport scattering rates PP indicated. The position of the maximum enhancement (t,h)(t^{*},h^{*}) is shown for one curve, P=P=15. The lower panel: the position of the maximum enhancement tt^{*} (left axis) and hh^{*} (right axis) as function of PP. On both panels D=0.1D=0.1, Pm=0P_{m}=0.

It is worth noting that the transport scattering causes an increase of the TcT_{c}-enhancement up to P10P\sim 10 and only for strong scattering with P>10P>10 it suppresses the effect in agreement with the general theoretical statement that the effect should disappear in the dirty limit [8, 6].

Basically, the physical reason for the enhancement of the superconducting region on the (T,H)(T,H) phase diagram by transport scattering is the same as one for the case of enhancement of the bulk upper critical field Hc2(T)H_{c2}(T): the scattering caused reduction of the coherence length ξ(T,P)\xi(T,P) yet enforced by the field dependence of ξ\xi.

Refer to caption
Figure 2: (Color online) The upper panel: the clean-limit phase boundary h(t)h(t) zoomed at high temperatures for a set of thicknesses indicated. The TcT_{c} enhancement disappears at approximately D=D=2.8 The lower panel: the close-to-zero-temperature field h(0)/D2H(0)h(0)/D^{2}\propto H(0) vs. DD. P=Pm=0P=P_{m}=0.

The upper panel of Fig. 2 shows phase boundaries for the clean case and a set of thicknesses from D=0.1D=0.1 to D=5D=5 at temperatures close to Tc0T_{c0}. The maximum DD with a finite TcT_{c}-enhancement in this set is D=2.8D=2.8, close to 2.6\approx 2.6, predicted based on GL theory [6].

The lower panel shows that at TT close to zero, the field

H=hD22πϕ0Tc022v2H=\frac{h}{D^{2}}\,\frac{2\pi\phi_{0}T_{c0}^{2}}{\hbar^{2}v^{2}}\, (18)

(in common units) is nearly constant for small thicknesses in the interval 0.1<D10.1<D\lesssim 1, but it decreases for thicker films. One should have in mind that the “laminar” structure of Δ(x)\Delta(x) of thin films with increasing thickness becomes unstable and gives way to vortices with Δ(x,y)\Delta(x,y) as had been shown in [17, 18] within GL theory. Although the large values of DD are irrelevant for the film problem, it is interesting to note that H(0)H(0) for large DD is close to Hc2(0)H_{c2}(0).

Figure 3 shows that the magnetic scattering, while strongly suppressing the critical temperature, leaves the TcT_{c} enhancement effect, i.e. (ttc)(t^{*}-t_{c}) nearly unchanged. For curves Pm=0P_{m}=0 and Pm=0.13P_{m}=0.13, TcT_{c} drops by a factor of 5, whereas (ttc)(t^{*}-t_{c}) changes by about 30%30\%.

Refer to caption
Figure 3: (Color online) The upper panel: the phase boundary h(t)h(t) for different magnetic scattering rates, PmP_{m}, at a fixed P=12P=12. The power panel: the maximum tct_{c} enhancement, tt^{*} vs. transport scattering rate PP for two fixed PmP_{m}. At both panels D=0.1D=0.1.

It should be noted that the scattering parameters PP and PmP_{m} refer to the bulk properties of the film material. Effects of magnetic ions on one of the film faces can be taken into account by the boundary conditions at the surfaces rather than by the value of PmP_{m}, the subject of the next Section.

III Mixed boundary conditions: 𝚫(𝒅/𝟐)=𝟎\bm{\Delta^{\prime}(d/2)=0} on one surface and 𝚫(𝒅/𝟐)=𝟎\bm{\Delta(-d/2)=0} on the other

These conditions can be realized in a film on an insulating substrate (Δ=0\Delta^{\prime}=0) with magnetic ions spread at the other surface (Δ=0\Delta=0). We have chosen these boundary conditions to demonstrate how sensitive the phase boundary in films placed in the parallel field is to the film environment. In fact, Saint-James and de Gennes pointed this out in their seminal work [12].

The boundary conditions of the Section title suffice to determine both the arbitrary constant CC and the parameter η\eta of the general solution (LABEL:solution). Δ(d/2)=0\Delta(-d/2)=0 yields

C=2h1F1(1η4,12,h4)/1F1(3η4,32,h4).\displaystyle C=\frac{2}{\sqrt{h}}\,_{1}F_{1}\left(\frac{1-\eta}{4},\frac{1}{2},\frac{h}{4}\right)\Big{/}\,_{1}F_{1}\left(\frac{3-\eta}{4},\frac{3}{2},\frac{h}{4}\right).\qquad (19)

The condition Δ(d/2)=0\Delta^{\prime}(d/2)=0 results in:

3C(1+h4)1F1(3η4,32,h4)\displaystyle 3C\left(1+\frac{h}{4}\right)\,_{1}F_{1}\left(\frac{3-\eta}{4},\frac{3}{2},\frac{h}{4}\right)
+h2[31F1(1η4,12,h4)3(1+η)1F1(1η4,32,h4)\displaystyle+\frac{\sqrt{h}}{2}\Big{[}3\,_{1}F_{1}\left(\frac{1-\eta}{4},\frac{1}{2},\frac{h}{4}\right)-3(1+\eta)\,_{1}F_{1}\left(\frac{1-\eta}{4},\frac{3}{2},\frac{h}{4}\right)
Ch2(3+η)1F1(3η4,52,h4)]=0.\displaystyle-C\frac{\sqrt{h}}{2}(3+\eta)\,_{1}F_{1}\left(\frac{3-\eta}{4},\frac{5}{2},\frac{h}{4}\right)\Big{]}=0. (20)

At a given hh, Eqs. (19) and (20) can be solved for η\eta numerically (η\eta is needed for the power σ=(η+1)/2\sigma=-(\eta+1)/2 in the integral SS).

III.1 Zero-field 𝑻𝒄(𝒅)\bm{T_{c}(d)}

The condition Δ(d/2)=0\Delta(-d/2)=0 suppresses the film TcT_{c} even in the field absence. Evaluation of this suppression is necessary to interpret various transition curves h(t)h(t). In zero field, the order parameter at the phase boundary satisfies Δ′′=k2Δ\Delta^{\prime\prime}=k^{2}\Delta with the solution Δ=Δ0sin|k|(x+d/2)\Delta=\Delta_{0}\sin|k|(x+d/2) with |k|=π/2d|k|=\pi/2d. Further, TcT_{c} should be found from the self-consistency Eq. (4) which contains the quantity SS via Eq. (5). The shortest way to get SS for H=0H=0 is to go to the definition of SS as a power series [8, 16] and set in it q2=2πH/ϕ0=0q^{2}=2\pi H/\phi_{0}=0:

S=1μtan1μ,μ=π2D+β+.\displaystyle S=\frac{1}{\mu}\,\tan^{-1}\mu\,,\qquad\mu=\frac{\pi}{2D}\,\frac{\ell^{+}}{\beta^{+}}\,. (21)

The self-consistency equation now reads:

lntc=n=0[1n+1/22tcStc(2n+1)+P+SP].\displaystyle-\ln t_{c}=\sum_{n=0}^{\infty}\left[\frac{1}{n+1/2}-\frac{2t_{c}S}{t_{c}(2n+1)+P^{+}-SP^{-}}\right].\qquad (22)

where tc=Tc/Tc0t_{c}=T_{c}/T_{c0} and Tc0T_{c0} is the critical temperature of the bulk material in the absence of pair-breaking scattering. The dimensionless parameter μ\mu of Eq. (21) is

μ=π2D1tc(2n+1)+P+,D=d2πTc0v,\displaystyle\mu=\frac{\pi}{2D}\,\frac{1}{t_{c}(2n+1)+P^{+}}\,,\qquad D=d\,\frac{2\pi T_{c0}}{\hbar v}\,, (23)

so that one can numerically solve the self-consistency equation for tc(D)t_{c}(D).

Refer to caption
Figure 4: (Color online) Zero-field critical temperature tc(D)t_{c}(D) as a function of thickness DD for the mixed boundary conditions and various combinations of the scattering parameters indicated.

As the upper panel of Fig. 4 shows, the requirement Δ=0\Delta=0 at one of the film surfaces leads to a progressive reduction of TcT_{c} with decreasing thickness. Moreover, TcT_{c} turns zero at D=Dc=2D=D_{c}=2 in the clean case, so that in zero field SC is completely suppressed for D<DcD<D_{c}. With increasing transport scattering, the sharp break of tc(D)t_{c}(D) at DcD_{c} moves to smaller thicknesses. Hence, the phenomenology of SC films in parallel fields is quite peculiar. The lower panel shows that the pair-breaking scattering smears the sharp break in tc(D)t_{c}(D) to a smooth crossover, whose position is shifted to thicker films. Our example of Pm=0.13P_{m}=0.13 corresponds to a strong pair breaking and the gapless situation in the bulk (recall that the critical value of PmP_{m} where the bulk Tc(Pm)=0T_{c}(P_{m})=0 is Pm=0.14P_{m}=0.14, see e.g. [14]).

It is instructive to observe that if D1D\gg 1, the parameter μ\mu is small, and Eq. (22) is reduced to the Abrikosov-Gor’kov bulk relation for tc(Pm)t_{c}(P_{m}):

lntc=ψ(12+Pmtc)ψ(12).\displaystyle-\ln t_{c}=\psi\left(\frac{1}{2}+\frac{P_{m}}{t_{c}}\right)-\psi\left(\frac{1}{2}\right). (24)

III.2 Phase boundary

For thicknesses substantially exceeding DcD_{c} (Dc=2D_{c}=2 for the clean limit) the transition curve is of the type HTcTH\sim\sqrt{T_{c}-T} with zero enhancement as shown in Fig. 5.

Refer to caption
Figure 5: (Color online) The phase boundary h(t)h(t) for the mixed boundary conditions on the order parameter, Δ(D/2)=0\Delta^{\prime}(D/2)=0 on one surface, and Δ(D/2)=0\Delta(-D/2)=0 on the other in a clean limit, for P=0P=0, Pm=0P_{m}=0. The reduced field is h=(2πd2/ϕ0)Hh=(2\pi d^{2}/\phi_{0})H and the reduced temperature t=T/Tc0t=T/T_{c0}. The numbers by the curves are dimensionless thicknesses D=(2πTc0/v)dD=(2\pi T_{c0}/\hbar v)d.

When D<Dc=2D<D_{c}=2, Tc=0T_{c}=0 for H=0H=0. Therefore, the low end of the transition curve should start at t=0t=0, as is seen in Fig. 5 for clean films with D=1.8D=1.8 and 2. The equilibrium SC does not exist at all out of these curves. For SC to exist one should apply field within the area inside these curves. In particular such a phase boundary implies that the magnetoresistance at a fixed temperature t0.36t\lesssim 0.36 should have a minimum for D=2D=2. These examples demonstrate that thin films in parallel fields complement the list of phenomena where the magnetic field “helps” SC instead of suppressing it, see e.g. [4].

Unlike the situation with D<Dc=2D<D_{c}=2, for D>DcD>D_{c} the zero-field TcT_{c} is not zero, therefore the low end of the transition curve starts at Tc>0T_{c}>0, examples are shown in Fig. 5 for D=2.2D=2.2 and larger. In the region of thicknesses adjacent to DcD_{c}, the phase boundary may take a non-trivial shape shown for D=2.2,  2.3,  2.5D=2.2,\,\,2.3,\,\,2.5 where the transition curve h(t)h(t) becomes multi-valued.

IV Summary

We have considered thin superconducting films in a parallel magnetic field. Near TcT_{c}, this problem has been discussed in the classic GL paper [19]. Our approach is based on the quasi-classical microscopic theory of Eilenberger [13] that holds for any TT.

We have shown that in the presence of impurities, the magnetic ones included, the model [8, 6] developed in the late 80’s still works. We obtained conditions for the remarkable effect recently observed [2], the enhancement of the in-field critical temperature Tc(H)T_{c}(H) above the zero-field Tc(0)T_{c}(0).

It turns out that transport scattering amplifies this effect if the scattering parameter Pξ0/10P\sim\xi_{0}/\ell\lesssim 10 (\ell is the mean-free path and ξ0\xi_{0} is the BCS zero-TT coherence length). For larger PP, the TcT_{c}-enhancement is suppressed to disappear in the dirty limit [8, 6]. This new insight clarifies the role of the transport scattering bringing it in line with the general theory prediction of absent TcT_{c}-enhancement in the dirty limit. On the other hand, this improves the chances to observe the effect [2, 3], because the transport scattering in thin films is usually strong. For example, the experiment [2] registered TcT_{c} enhancements in amorphous Pb films with the estimated mean-free path 1\ell\approx 1\,nm whereas estimates of ξ0\xi_{0} in Pb range between 230\approx 230 and 300300\,nm. In general, while in many modern superconductors, such as high-TcT_{c} cuprates or is iron pnictides, ξ0\xi_{0} is so short that makes it challenging to make such films, in technologically - important Nb it is quite feasible with ξ040\xi_{0}\approx 40 nm.

It should be noted that the effect of magnetic impurities per-se on the TcT_{c}-enhancement turned out relatively weak, the standard TcT_{c} suppression notwithstanding, see Fig. 3.

The properties of thin films in a parallel magnetic field are very sensitive to physical conditions on their faces. If, for example, pair-breaking magnetic ions are spread over one of the faces while the opposite face is on an insulating substrate, then realistic boundary conditions for the order parameter would be Δ=0\Delta=0 on one face and xΔ(x)=0\partial_{x}\Delta(x)=0 at the other. This arrangement was in fact tested in experiment [2].

The major consequence of the condition Δ=0\Delta=0 on one of the faces is that it makes the critical temperature thickness dependent. We find that for P=Pm=0P=P_{m}=0, the surface pair breaking kills the SC in zero-field for thicknesses D<2D<2 (in units v/2πTc0\hbar v/2\pi T_{c0}). But as Fig. 5 shows, even for D<2D<2, application of the magnetic field may cause the SC reentrance at a finite field interval. Hence, the film magnetoresistance at T=T=\,const should have a dip in this interval.

For 2<D32<D\lesssim 3, the competition of reentrance and finite TcT_{c} causes the phase transition curve to acquire a non-trivial shape so that h(t)h(t) becomes multi-valued, see Fig. 5.

It is worth mentioning that the problem of the phase boundary for a film in a parallel field is directly related to that of the surface critical field Hc3H_{c3}. In the latter case, SC near the surface can exist in fields out of the phase boundary of the bulk material. In the film case we have two surfaces close to each other and again SC can exist out of the bulk phase boundary in thin enough films. In particular, in finite fields it can exist above the zero-field critical temperature Tc0T_{c0}. The latter possibility, strange at first sight, is as “strange” as the SC in fields Hc2<H<Hc3H_{c2}<H<H_{c3}, in both cases it exists out of the phase boundary of the bulk material.

V Acknowledgments

This work was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Science and Engineering Division. Ames Laboratory is operated for the U.S. DOE by Iowa State University under contract # DE-AC02-07CH11358.

RP acknowledges support from the DOE National Quantum Information Science Research Centers, Superconducting Quantum Materials and Systems Center (SQMS) under contract # DE-AC02-07CH11359.

Appendix A The sum 𝑺\bm{S} in the presence of magnetic impurities

The solution ff of Eq. (2) can be written as

f\displaystyle f =\displaystyle= (2ω++𝒗𝚷)1(F/τ+2Δ)\displaystyle(2\omega^{+}+\bm{v}\bm{\Pi})^{-1}(F/\tau^{-}+2\Delta) (25)
=\displaystyle= 0𝑑ρeρ(2ω++𝒗𝚷)(F/τ+2Δ).\displaystyle\int_{0}^{\infty}d\rho e^{-\rho(2\omega^{+}+\bm{v}\bm{\Pi})}(F/\tau^{-}+2\Delta)\,.

Taking the Fermi surface average we get

F=1τ0𝑑ρe2ω+ρeρ𝒗𝚷(F+2Δτ).\displaystyle F=\frac{1}{\tau^{-}}\int_{0}^{\infty}d\rho e^{-2\omega^{+}\rho}\left\langle e^{-\rho\bm{v}\bm{\Pi}}\right\rangle(F+2\Delta\tau^{-})\,.\qquad (26)

The term \langle...\rangle does not contain the scattering parameters, hence it is the same as that calculated in [8, 5, 6] for the clean case:

eρ𝒗𝚷F~=m,j(q2)j(m!)2j!(2μ)!!(2μ+1)!!(ρv2)2μΠ+mΠmF~.\displaystyle\left\langle e^{-\rho\bm{v}\bm{\Pi}}\tilde{F}\right\rangle=\sum_{m,j}\frac{(-q^{2})^{j}}{(m!)^{2}j!}\frac{(2\mu)!!}{(2\mu+1)!!}\left(\frac{\rho v}{2}\right)^{2\mu}\Pi^{+^{m}}\Pi^{-^{m}}\tilde{F}.
(27)

Here F~=F+2Δτ\tilde{F}=F+2\Delta\tau^{-}, μ=m+j\mu=m+j, and Π±=Πx±iΠy\Pi^{\pm}=\Pi_{x}\pm i\Pi_{y}. After integrating over ρ\rho, one obtains from Eq. (26)

F=12ω+τm,j(q2)jj!(2μ+1)(μ!m!)2(+β+)2μΠ+mΠmF~\displaystyle F=\frac{1}{2\omega^{+}\tau^{-}}\sum_{m,j}\frac{(-q^{2})^{j}}{j!(2\mu+1)}\left(\frac{\mu!}{m!}\right)^{2}\left(\frac{\ell^{+}}{\beta^{+}}\right)^{2\mu}\Pi^{+^{m}}\Pi^{-^{m}}\tilde{F}
+=vτ+,β+=1+2ωτ+.\displaystyle\ell^{+}=v\tau^{+},\quad\beta^{+}=1+2\omega\tau^{+}\,. (28)

One can check that if no magnetic impurities are involved, this reduces to Eq. (12) of [8]. Using commutation properties of operators Π±\Pi^{\pm} in uniform field, one manipulates

Π+mΠmF~=F~i=1m[k2+(2i1)q2]\displaystyle\Pi^{+^{m}}\Pi^{-^{m}}\tilde{F}=\tilde{F}\prod_{i=1}^{m}[k^{2}+(2i-1)q^{2}] (29)

and obtains:

F=Δ2τS2ω+τS\displaystyle F=\Delta\frac{2\tau^{-}S}{2\omega^{+}\tau^{-}-S} (30)

with

S=m,j(q2)jj!(2μ+1)(μ!m!)2(+β+)2μi=1m[k2+(2i1)q2].\displaystyle S=\sum_{m,j}\frac{(-q^{2})^{j}}{j!(2\mu+1)}\left(\frac{\mu!}{m!}\right)^{2}\left(\frac{\ell^{+}}{\beta^{+}}\right)^{2\mu}\prod_{i=1}^{m}[k^{2}+(2i-1)q^{2}].
(31)

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